ADVANCED PROCESS SENSING AND CONTROL USING NEAR INFRARED SPECTRAL REFLECTOMETRY
First Claim
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1. A processing chamber comprising:
- a chamber body assembly having a processing volume;
a showerhead assembly coupled to a ceiling of the chamber body and having a region transmissive to an optical metrology signal;
an optical monitoring device arranged to view the processing volume at a radial position of the chamber body; and
a spectral sensing system arranged to view the processing volume of the chamber body through the transmissive region of the showerhead assembly at an angle orthogonal to the plane of the showerhead.
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Abstract
Embodiments described herein provide a method and apparatus for obtaining process information in a substrate manufacturing process using plasma. In one embodiment, a chamber is provided having one or more optical metrology modules that are positioned such that optical energy from the plasma process is detected at substantially orthogonal angles. Metrics derived from detected optical energy may be used for endpoint determination, substrate temperature, and monitoring of critical dimensions on the substrate.
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Citations
26 Claims
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1. A processing chamber comprising:
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a chamber body assembly having a processing volume; a showerhead assembly coupled to a ceiling of the chamber body and having a region transmissive to an optical metrology signal; an optical monitoring device arranged to view the processing volume at a radial position of the chamber body; and a spectral sensing system arranged to view the processing volume of the chamber body through the transmissive region of the showerhead assembly at an angle orthogonal to the plane of the showerhead. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A fiber optic cable bundle coupled to a radiation source and at least one spectrometer, comprising:
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a plurality of optical fibers secured in a bundle, the bundle comprising a first portion comprising at least one source fiber having a first end coupled to the radiation source and a second end positioned to direct radiation from the source into a processing chamber; a second portion comprising a plurality of first return fibers having a first end in communication with the at least one spectrometer and a second end positioned to receive optical signals originating the processing chamber; and a third portion comprising a plurality of inactive fibers, wherein the second portion and the third portion are arranged on a common radius, and each source fiber is separated along the common radius by either at least one of the return fibers, at least one of the inactive fibers, or both return and inactive fibers. - View Dependent Claims (11, 12, 13, 14, 15, 16)
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17. A method for processing a substrate, comprising:
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etching a substrate positioned on a substrate support disposed in an etch chamber, the substrate etched through a patterned masking layer in the presence of a plasma; introducing optical energy into the plasma and directed towards the substrate; collecting a first signal and a second signal from the plasma; routing the first signal through a fiber optic bundle to a detector, wherein the fiber optic cable bundle comprises; a first portion comprising at least one source fiber having a first end coupled to a radiation source and a second end positioned to direct radiation from the source into a processing chamber; a second portion comprising a plurality of first return fibers having a first end in communication with at least one spectrometer and a second end positioned to receive optical signals originating the processing chamber; and a third portion comprising a plurality of inactive fibers, wherein the second portion and the third portion are arranged on a common radius, and each source fiber is separated along the common radius by either at least one of the return fibers, at least one of the inactive fibers, or both return and inactive fibers; and controlling the etch process in response to the collected signals. - View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25)
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26. A computer-readable medium containing instructions, that when executed by a processing system, control an etch process performed in the processing system, the etch process comprising:
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etching a substrate positioned on a substrate support disposed in a processing system, the substrate etched through a patterned masking layer in the presence of a plasma; directing optical energy through the plasma towards the substrate; collecting a first signal and a second signal from the plasma; routing the first signal through a fiber optic bundle to a detector, wherein the fiber optic cable bundle comprises; a first portion comprising at least one source fiber having a first end coupled to a radiation source and a second end positioned to direct radiation from the source into a processing chamber; a second portion comprising a plurality of first return fibers having a first end in communication with at least one spectrometer and a second end positioned to receive optical signals originating the processing chamber; and a third portion comprising a plurality of inactive fibers, wherein the second portion and the third portion are arranged on a common radius, and each source fiber is separated along the common radius by either at least one of the return fibers, at least one of the inactive fibers, or both return and inactive fibers; and controlling the etch process in response to the collected signals.
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Specification