THIN-FILM TRANSISTOR AND DISPLAY DEVICE
First Claim
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1. A thin-film transistor comprising:
- a pair of impurity semiconductor layers with a space therebetween, the pair of impurity semiconductor layers including an impurity element imparting one conductivity type, wherein the pair of impurity semiconductor layers overlap at least partly with a gate electrode with a gate insulating layer therebetween;
a pair of second semiconductor layers including an acceptor impurity, wherein the pair of second semiconductor layers is overlapped at least partly with the gate electrode and the pair of impurity semiconductor layers, over the gate insulating layer, is in contact with the gate insulating layer, and is disposed with a space therebetween in a channel length direction; and
an amorphous semiconductor layer over the pair of second semiconductor layers, wherein the amorphous semiconductor layer is in contact with the pair of second semiconductor layers and a portion of the gate insulating layer between the pair of second semiconductor layers.
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Abstract
A thin-film transistor in which problems with ON-state current and OFF-state current are solved, and a thin-film transistor capable of high-speed operation. The thin-film transistor includes a pair of impurity semiconductor layers in which an impurity element imparting one conductivity type is added to form a source and drain regions, provided with a space therebetween so as to be overlapped with a gate electrode with a gate insulating layer interposed between the gate electrode and the impurity semiconductor layers; a pair of semiconductor layers in which an impurity element which serves as an acceptor is added, overlapped over the gate insulating layers with the gate electrode and the impurity semiconductor layers, and disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer being in contact with the gate insulating layer and the pair of semiconductor layers and extended between the pair of semiconductor layers.
56 Citations
18 Claims
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1. A thin-film transistor comprising:
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a pair of impurity semiconductor layers with a space therebetween, the pair of impurity semiconductor layers including an impurity element imparting one conductivity type, wherein the pair of impurity semiconductor layers overlap at least partly with a gate electrode with a gate insulating layer therebetween; a pair of second semiconductor layers including an acceptor impurity, wherein the pair of second semiconductor layers is overlapped at least partly with the gate electrode and the pair of impurity semiconductor layers, over the gate insulating layer, is in contact with the gate insulating layer, and is disposed with a space therebetween in a channel length direction; and an amorphous semiconductor layer over the pair of second semiconductor layers, wherein the amorphous semiconductor layer is in contact with the pair of second semiconductor layers and a portion of the gate insulating layer between the pair of second semiconductor layers. - View Dependent Claims (2, 3, 4, 5, 6)
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7. A thin-film transistor comprising:
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a gate insulating layer provided to cover a gate electrode; an amorphous semiconductor layer over the gate insulating layer; a pair of impurity semiconductor layers with a space therebetween, the pair of impurity semiconductor layers including an impurity element imparting one conductivity type, wherein the pair of impurity semiconductor layers over the amorphous semiconductor layer; and a pair of second semiconductor layers including an acceptor impurity, wherein the pair of second semiconductor layers is provided between the gate insulating layer and the amorphous semiconductor layer, is overlapped at least partly with the pair of impurity semiconductor layers, is in contact with the gate insulating layer, and is disposed with a space therebetween. - View Dependent Claims (8, 9, 10, 11, 12)
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13. A thin-film transistor comprising:
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a pair of semiconductor layers including an acceptor impurity, wherein the pair of semiconductor layers is in contact with a gate insulating layer, and is overlapped with a gate electrode with the gate insulating layer therebetween; an amorphous semiconductor layer provided to cover the pair of semiconductor layers; and a pair of impurity semiconductor layers including an impurity element imparting one conductivity type, wherein the pair of impurity semiconductor layers is provided in accordance with the pair of semiconductor layers including an acceptor impurity, over the amorphous semiconductor layer, and wherein the amorphous semiconductor layer is in contact with the pair of semiconductor layers and a portion of the gate insulating layer between the pair of semiconductor layers. - View Dependent Claims (14, 15, 16, 17, 18)
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Specification
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Current AssigneeSemiconductor Energy Laboratory Co., Ltd.
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Original AssigneeSemiconductor Energy Laboratory Co., Ltd.
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InventorsGODO, Hiromichi, YAMAZAKI, Shunpei, DAIRIKI, Koji, MIYAIRI, Hidekazu, KUROKAWA, Yoshiyuki, KAWAE, Daisuke, KOBAYASHI, Satoshi
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Granted Patent
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Time in Patent OfficeDays
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Field of Search
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US Class Current257/59
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CPC Class CodesH01L 29/04 characterised by their crys...H01L 29/41733 for thin film transistors w...H01L 29/4908 for thin film semiconductor...H01L 29/66765 Lateral single gate single ...H01L 29/78609 for preventing leakage curr...H01L 29/78618 characterised by the drain ...H01L 29/78669 with inverted-type structur...
