SEMICONDUCTOR DEVICE AND METHOD FOR FORMING SAME
First Claim
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1. A method for manufacturing a semiconductor device, comprising:
- providing a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material forming a field electrode in a lower portion of the trench;
forming a cover comprising a second material above the field electrode, the first isolating material being selectively etchable to the second material;
removing the sidewall isolation in an upper portion of the trench;
forming a gate dielectric on the sidewall in the upper portion of the trench; and
forming a gate electrode in the upper portion of the trench.
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Abstract
A semiconductor device and method. One embodiments provides a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material, a field electrode formed in lower portion of the trench, a cover comprising a second material above the field electrode, the second material being selectively etchable to the first isolating material, a gate dielectric on the sidewall in an upper portion of the trench and a gate electrode in the upper portion of the trench.
25 Citations
25 Claims
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1. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material forming a field electrode in a lower portion of the trench; forming a cover comprising a second material above the field electrode, the first isolating material being selectively etchable to the second material; removing the sidewall isolation in an upper portion of the trench; forming a gate dielectric on the sidewall in the upper portion of the trench; and forming a gate electrode in the upper portion of the trench. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A method for manufacturing a semiconductor device, comprising:
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providing a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material forming a field electrode in a lower portion of the trench; forming a cover comprising a second material above the field electrode, the first isolating material being selectively etchable to the second material; removing the sidewall isolation in an upper portion of the trench; forming a gate dielectric on the sidewall in the upper portion of the trench; and forming a gate electrode in the upper portion of the trench, including defining the trench along its lateral extend to comprise a first portion where the cover above the field electrode is formed and a second portion where a conductive connection to the field electrode is formed. - View Dependent Claims (11, 12)
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13. A semiconductor device, comprising:
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a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material; a field electrode formed in lower portion of the trench; a cover comprising a second material above the field electrode, the first isolating material being selectively etchable to the second material; a gate dielectric on the sidewall in an upper portion of the trench; and a gate electrode in the upper portion of the trench. - View Dependent Claims (14, 15, 16, 17, 18, 19, 20, 21, 22)
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23. A semiconductor device, comprising:
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a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material; a field electrode formed in lower portion of the trench; a cover comprising a second material above the field electrode, the first isolating material being selectively etchable to the second material; a gate dielectric on the sidewall in an upper portion of the trench; and
a gate electrode in the upper portion of the trench, andwherein the trench along its lateral extend comprises a first portion where the cover above the field electrode is formed and a second portion where a conductive connection to the field electrode is formed. - View Dependent Claims (24)
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25. A semiconductor device, comprising:
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a semiconductor substrate having a trench with a sidewall isolation comprising a first isolating material; a field electrode formed in lower portion of the trench; means for providing a cover comprising a second material above the field electrode, the first isolating material being selectively etchable to the second material; a gate dielectric on the sidewall in an upper portion of the trench; and a gate electrode in the upper portion of the trench.
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Specification