SEMICONDUCTOR COMPONENT WITH A DRIFT REGION AND A DRIFT CONTROL REGION
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Abstract
A semiconductor component with a drift region and a drift control region. One embodiment includes a semiconductor body having a drift region of a first conduction type in the semiconductor body. A drift control region composed of a semiconductor material, which is arranged, at least in sections, is adjacent to the drift region in the semiconductor body. An accumulation dielectric is arranged between the drift region and the drift control region.
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Citations
142 Claims
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1-71. -71. (canceled)
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72. A semiconductor component having a semiconductor body comprising:
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a drift region of a first conduction type in the semiconductor body; a drift control region composed of a semiconductor material, arranged, at least in sections, adjacent to the drift region in the semiconductor body; and an accumulation dielectric, arranged between the drift region and the drift control region. - View Dependent Claims (73, 74, 75, 76, 77, 78, 79, 80, 81, 82, 83, 84, 85, 86, 87, 88, 89, 90, 91, 92, 93, 94, 95, 96, 97, 98, 99, 100, 101, 102, 103, 104, 105, 106, 107, 111, 112, 113, 114, 115, 116, 117, 118, 119, 120, 121, 122, 123, 124, 125, 126, 127, 128, 129, 130, 131, 132, 133)
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- 108. The semiconductor component of claim 108, comprising wherein the gate electrode is arranged in a trench of the semiconductor body.
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134. A power transistor having a semiconductor body comprising:
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a source region and a drain region of a first conduction type; a drift region, which is adjacent to the drain region; a body region of a second conduction type, arranged between the source region and the drift region; a gate electrode and a gate dielectric arranged between the gate electrode and the body region; a drift control region composed of a semiconductor material, arranged, at least in sections, adjacent to the drift region in the semiconductor body and coupled to the source region and the drain region; and an accumulation dielectric, arranged between the drift region and the drift control region. - View Dependent Claims (135, 136, 137, 138, 139)
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140. A power transistor having a semiconductor body comprising:
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a source region and a drain region of a first conduction type; a drift region, which is adjacent to the drain region and doped complementarily to the drain region; a body region of a second conduction type, arranged between the source region and the drift region; a gate electrode and a gate dielectric arranged between the gate electrode and the body region; a drift control region composed of a semiconductor material, arranged, at least in sections, adjacent to the drift region in the semiconductor body; and an accumulation dielectric, arranged between the drift region and the drift control region. - View Dependent Claims (141, 142)
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Specification