Semiconductor integrated circuit device

• US 20090219069A1
• Filed: 05/08/2009
• Published: 09/03/2009
• Est. Priority Date: 12/18/2000
• Status: Active Grant

• Current Assignee: Renesas Electronics Corporation
• Original Assignee: Hitachi ULSI Systems Company Limited (Hitachi, Ltd.), Renesas Technology Corporation (Renesas Electronics Corporation)
• Inventors: Shinozaki, Masao, Akioka, Takashi, Asari, Sanae, Kohara, Yutaka, Miyata, Shusaku, Nishimoto, Kenji, Nakazato, Shinji
• Granted Patent: US 7,808,107 B2
• Time in Patent Office: Days
• US Class Current: 327/158
• CPC Class Codes: H01L 2224/02 Bonding areas; Manufacturing methods related thereto
• CPC Class Codes: H01L 2224/0231 Manufacturing methods of the redistribution layers
• CPC Class Codes: H01L 2224/02311 Additive methods
• CPC Class Codes: H01L 2224/02375 Top view
• CPC Class Codes: H01L 2224/02377 Fan-in arrangement
• CPC Class Codes: H01L 2224/024 Material of the insulating layers therebetween
• CPC Class Codes: H01L 2224/0401 Bonding areas specifically adapted for bump connectors, e.g. under bump metallisation [UBM]
• CPC Class Codes: H01L 2224/05124 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05147 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05155 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05166 Titanium [Ti] as principal constituent
• CPC Class Codes: H01L 2224/05171 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/05548 Bonding area integrally formed with a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05569 the external layer being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/05624 Aluminium [Al] as principal constituent
• CPC Class Codes: H01L 2224/05644 Gold [Au] as principal constituent
• CPC Class Codes: H01L 2224/05647 Copper [Cu] as principal constituent
• CPC Class Codes: H01L 2224/05655 Nickel [Ni] as principal constituent
• CPC Class Codes: H01L 2224/05671 Chromium [Cr] as principal constituent
• CPC Class Codes: H01L 2224/13024 the bump connector being disposed on a redistribution layer on the semiconductor or solid-state body
• CPC Class Codes: H01L 2224/13099 : Material
• CPC Class Codes: H01L 2224/131 : with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
• CPC Class Codes: H01L 23/5286 : Arrangements of power or ground buses
• CPC Class Codes: H01L 24/02 : Bonding areas on insulating substrates, e.g. chip carriers, H01L23/49816, H01L23/49838, H01L23/5389; Manufacturing methods related thereto
• CPC Class Codes: H01L 24/05 : of an individual bonding area
• CPC Class Codes: H01L 24/11 : Manufacturing methods for bumps on insulating substrates H01L21/4853
• CPC Class Codes: H01L 24/13 : of an individual bump connector
• CPC Class Codes: H01L 2924/00 : Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0001 : Technical content checked by a classifier
• CPC Class Codes: H01L 2924/00014 : the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/01005 : Boron [B]
• CPC Class Codes: H01L 2924/01006 : Carbon [C]
• CPC Class Codes: H01L 2924/01013 : Aluminum [Al]
• CPC Class Codes: H01L 2924/01015 : Phosphorus [P]
• CPC Class Codes: H01L 2924/01022 : Titanium [Ti]
• CPC Class Codes: H01L 2924/01024 : Chromium [Cr]
• CPC Class Codes: H01L 2924/01027 : Cobalt [Co]
• CPC Class Codes: H01L 2924/01029 : Copper [Cu]
• CPC Class Codes: H01L 2924/01033 : Arsenic [As]
• CPC Class Codes: H01L 2924/01074 : Tungsten [W]
• CPC Class Codes: H01L 2924/01076 : Osmium [Os]
• CPC Class Codes: H01L 2924/01078 : Platinum [Pt]
• CPC Class Codes: H01L 2924/01079 : Gold [Au]
• CPC Class Codes: H01L 2924/01082 : Lead [Pb]
• CPC Class Codes: H01L 2924/013 : Alloys
• CPC Class Codes: H01L 2924/014 : Solder alloys
• CPC Class Codes: H01L 2924/06 : Polymers polymers per se C08; polymer adhesives C09J
• CPC Class Codes: H01L 2924/12042 : LASER
• CPC Class Codes: H01L 2924/12044 : OLED
• CPC Class Codes: H01L 2924/13091 : Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
• CPC Class Codes: H01L 2924/14 : Integrated circuits
• CPC Class Codes: H01L 2924/19043 : being a resistor
• CPC Class Codes: H01L 2924/30105 : Capacitance
• CPC Class Codes: H01L 2924/3011 : Impedance
• CPC Class Codes: H01L 2924/3025 : Electromagnetic shielding

Abstract

Circuit elements and wirings constituting a circuit, and first electrodes electrically connected to such a circuit are provided on one main surface of a semiconductor substrate. An organic insulating film is formed on the circuit except for openings on the surfaces of the first electrodes. First and second external connecting electrodes are provided on the organic insulating film. At least one conductive layer for electrically connecting the first and second external connecting electrodes and the first electrodes is placed on the organic insulating film.

Claims

1. A semiconductor integrated circuit device comprising:

a semiconductor substrate;

circuit elements and wirings which are provided on one main surface of the semiconductor substrate and constitute a circuit;

first and second electrodes provided on the one main surface and electrically connected to the circuit;

an organic insulating film provided on the circuit except for openings on the surfaces of the first and second electrodes; and

a conductive layer placed on the organic insulating film which connects the first and second electrodes to each other.

2. The semiconductor integrated circuit device according to claim 1, wherein the conductive layer is a rewiring.

3. The semiconductor integrated circuit device according to claim 1, further including first and second external connecting electrodes provided on the organic insulating film,

wherein the conductive layer is connected to the first and second external connecting electrodes.

4. The semiconductor integrated circuit device according to claim 3, wherein the first and second external connecting electrodes are respectively bump electrodes.

5. The semiconductor integrated circuit device according to claim 1, wherein the first and second electrodes are respectively bonding pads.

6. The semiconductor integrated circuit device according to claim 3, wherein the first and second external connecting electrodes are respectively set larger than the first and second electrodes in area.

7. The semiconductor integrated circuit device according to claim 6, wherein the first and second external connecting electrodes include solder balls.

8. The semiconductor integrated circuit device according to claim 1, further including first external connecting electrodes provided on the organic insulating film,

wherein the conductive layer is connected to each of the first external connecting electrodes, and

wherein the conductive layer is disconnected from external connecting electrodes other than the first external connecting electrodes.

9. The semiconductor integrated circuit device according to claim 8, wherein the first external connecting electrodes are respectively bump electrodes.

10. The semiconductor integrated circuit device according to claim 8, wherein the first external connecting electrodes are set larger than the first and second electrodes in area.

11. The semiconductor integrated circuit device according to claim 8, wherein the first external connecting electrodes are supplied with a clock signal.

12. The semiconductor integrated circuit device according to claim 11, wherein the first external connecting electrodes include solder balls.

13. The semiconductor integrated circuit device according to claim 1, wherein the conductive layer is disconnected from the external connecting electrodes.

14. The semiconductor integrated circuit device according to claim 1, further including a voltage forming circuit provided on the one main surface of the semiconductor substrate,

wherein the voltage forming circuit is responsive to a first voltage to form a second voltage different from the first voltage, and

wherein the conductive layer is connected to the voltage forming circuit to transfer the second voltage.

15. The semiconductor integrated circuit device according to claim 14, further including second external connecting electrodes and a conductive layer which transfer the first voltage to the voltage forming circuit.

16. The semiconductor integrated circuit device according to claim 1, further including a clock reproducing circuit provided on the one main surface of the semiconductor substrate,

wherein the clock reproducing circuit is responsive to a first clock to output a second clock corresponding to the first clock, and

wherein the conductive layer is connected to the clock reproducing circuit to transfer the second clock.

17. The semiconductor integrated circuit device according to claim 16, further including second external connecting electrodes and a conductive layer which transfer the first clock to the clock reproducing circuit.

18. The semiconductor integrated circuit device according to claim 16, wherein the clock reproducing circuit is a PLL circuit.

19. The semiconductor integrated circuit device according to claim 16, wherein the clock reproducing circuit is a DLL circuit.

20. The semiconductor integrated circuit device according to claim 16, wherein the clock reproducing circuit is an SMD circuit.

21. The semiconductor integrated circuit device according to claim 1, wherein the circuit includes a first circuit which outputs a DC voltage to the first electrode, and a second circuit operated in response to a voltage supplied from the second electrode.