Deposition Method and Manufacturing Method of Light-Emitting Device

• US 20090221107A1
• Filed: 02/24/2009
• Published: 09/03/2009
• Est. Priority Date: 02/29/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Seo, Satoshi, Ibe, Takahiro, Tanaka, Koichiro, Yamazaki, Shunpei
• Granted Patent: US 8,581,234 B2
• Time in Patent Office: Days
• US Class Current: 438/29
• CPC Class Codes: C23C 14/048 using irradiation by energy or particles
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/18 using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes

Abstract

Part of a material layer is deposited on a deposition target surface of a second substrate by steps of providing a first substrate having a light absorption layer and a material layer in contact with the light absorption layer over one of surfaces; making a surface of the first substrate over which the material layer is formed and a deposition target surface of a second substrate face to each other; depositing part of the material layer on the deposition target surface of the second substrate in such a manner that irradiation with laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer overlapping with the light absorption layer.

Claims

1. A deposition method comprising the steps of:

providing a first substrate having a plurality of light absorption layers each of which is formed into an island shape and a material layer which is formed so as to cover the plurality of light absorption layers over and in contact with a first surface of the first substrate;

making the first surface of the first substrate and a deposition target surface of a second substrate face to each other; and

depositing part of the material layer on the deposition target surface of the second substrate by delivering laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns in a direction from a second surface opposite to the first surface of the first substrate to the first surface of the first substrate through the first substrate to selectively heat part of the material layer which overlaps with the plurality of light absorption layers.

2. The deposition method according to claim 1,

wherein each of the plurality of light absorption layers has a reflectance of less than or equal to 70% with respect to light.

3. The deposition method according to claim 1,

wherein a thickness of each of the plurality of light absorption layers is greater than or equal to 10 nm and less than or equal to 600 nm.

4. The deposition method according to claim 1,

wherein each of the plurality of light absorption layers contains any of metal nitride, metal, and carbon.

5. The deposition method according to claim 1,

wherein the material layer comprises an organic compound.

6. The deposition method according to claim 1,

wherein a thickness of one of the plurality of light absorption layers is different from a thickness of the other one of the plurality of light absorption layers.

7. A deposition method comprising the steps of:

providing a first substrate having a light absorption layer which is formed into an island shape and a material layer which is formed so as to cover the light absorption layer over and in contact with a first surface of the first substrate;

making the first surface of the first substrate and a deposition target surface of a second substrate face to each other; and

depositing part of the material layer on the deposition target surface of the second substrate by delivering laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns in a direction from a second surface opposite to the first surface of the first substrate to the first surface of the first substrate through the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.

8. The deposition method according to claim 7,

wherein the light absorption layer has a reflectance of less than or equal to 70% with respect to light.

9. The deposition method according to claim 7,

wherein a thickness of the light absorption layer is greater than or equal to 10 nm and less than or equal to 600 nm.

10. The deposition method according to claim 7,

wherein the light absorption layer contains any of metal nitride, metal, and carbon.

11. The deposition method according to claim 7,

wherein the light absorption layer is formed in stripes.

12. The deposition method according to claim 7,

wherein the material layer is formed by a wet process.

13. The deposition method according to claim 7,

wherein the material layer comprises an organic compound.

14. The deposition method according to claim 7,

wherein the laser light is shaped into linear or rectangular laser light.

15. A method for manufacturing a light-emitting device comprising the steps of:

providing a first substrate having a plurality of light absorption layers each of which is formed into an island shape and a material layer which is formed so as to cover the plurality of light absorption layers over and in contact with a first surface of the first substrate;

forming an electrode over a second substrate;

making the first surface of the first substrate and a deposition target surface of a second substrate on the electrode face to each other; and

depositing part of the material layer on the deposition target surface of the second substrate by delivering laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns in a direction from a second surface opposite to the first surface of the first substrate to the first surface of the first substrate through the first substrate to selectively heat part of the material layer which overlaps with the plurality of light absorption layers.

16. The method for manufacturing a light-emitting device according to claim 15,

wherein each of the plurality of light absorption layers has a reflectance of less than or equal to 70% with respect to light.

17. The method for manufacturing a light-emitting device according to claim 15,

wherein a thickness of each of the plurality of light absorption layers is greater than or equal to 10 nm and less than or equal to 600 nm.

18. The method for manufacturing a light-emitting device according to claim 15,

wherein each of the plurality of light absorption layers contains any of metal nitride, metal, and carbon.

19. The method for manufacturing a light-emitting device according to claim 15,

wherein the material layer comprises an organic compound.

20. The method for manufacturing a light-emitting device according to claim 15,

wherein a thickness of one of the plurality of light absorption layers is different from a thickness of the other one of the plurality of light absorption layers.

21. The method for manufacturing a light-emitting device according to claim 15, wherein the material layer contains either one or both of a light-emitting material and a carrier-transporting material.

22. The method for manufacturing a light-emitting device according to claim 15, wherein the electrode is an anode.

23. A method for manufacturing a light-emitting device comprising the steps of:

providing a first substrate having a light absorption layer which is formed into an island shape and a material layer which is formed so as to cover the light absorption layer over and in contact with a first surface of the first substrate;

forming an electrode over a second substrate;

making the first surface of the first substrate and a deposition target surface of a second substrate on the electrode face to each other; and

depositing part of the material layer on the deposition target surface of the second substrate by delivering laser light of which repetition rate is greater than or equal to 10 MHz and pulse width is greater than or equal to 100 fs and less than or equal to 10 ns in a direction from a second surface opposite to the first surface of the first substrate to the first surface of the first substrate through the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.

24. The method for manufacturing a light-emitting device according to claim 23,

wherein the light absorption layer has a reflectance of less than or equal to 70% with respect to light.

25. The method for manufacturing a light-emitting device according to claim 23,

wherein a thickness of the light absorption layer is greater than or equal to 10 nm and less than or equal to 600 nm.

26. The method for manufacturing a light-emitting device according to claim 23,

wherein the light absorption layer contains any of metal nitride, metal, and carbon.

27. The method for manufacturing a light-emitting device according to claim 23,

wherein the light absorption layer is formed in stripes.

28. The method for manufacturing a light-emitting device according to claim 23,

wherein the material layer is formed by a wet process.

29. The method for manufacturing a light-emitting device according to claim 23,

wherein the material layer comprises an organic compound.

30. The method for manufacturing a light-emitting device according to claim 23,

wherein the laser light is shaped into linear or rectangular laser light.

31. The method for manufacturing a light-emitting device according to claim 23, wherein the material layer contains either one or both of a light-emitting material and a carrier-transporting material.

32. The method for manufacturing a light-emitting device according to claim 23, wherein the electrode is an anode.