VERTICAL LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME
3 Assignments
0 Petitions
Accused Products
Abstract
Provided is a vertical LED including an n-electrode; an n-type GaN layer formed under the n-electrode, the n-type GaN layer having a surface coming in contact with the n-electrode, the surface having a Ga+N layer containing a larger amount of Ga than that of N; an active layer formed under the n-type GaN layer; a p-type GaN layer formed under the active layer; a p-electrode formed under the p-type GaN layer; and a structure support layer formed under the p-electrode.
-
Citations
21 Claims
-
1-7. -7. (canceled)
-
8. A method of manufacturing a vertical LED, the method comprising:
-
forming a light emission structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially laminated on a substrate; forming a p-electrode on the light emission structure; forming a structure support layer on the p-electrode; removing the substrate to expose the n-type GaN layer; laser-treating the surface of the exposed n-type GaN layer to form a Ga layer and a Ga+N layer which are sequentially laminated from the laser-treated surface; and forming an n-electrode on the laser-treated surface of the n-type GaN layer. - View Dependent Claims (9, 10, 11, 12, 13, 14)
-
-
15. A method of manufacturing a vertical LED, the method comprising:
-
forming a light emission structure in which an n-type GaN layer, an active layer, and a p-type GaN layer are sequentially laminated on a substrate; forming a p-electrode on the light emission structure; forming a structure support layer on the p-electrode; removing the substrate to expose the n-type GaN layer; heat-treating the surface of the exposed n-type GaN layer to form a Ga layer and a Ga+N layer which are sequentially laminated from the heat-treated surface; and forming an n-electrode on the heat-treated surface of the n-type GaN layer. - View Dependent Claims (16, 17, 18, 19, 20, 21)
-
Specification