Etching Solution And Method For Structuring A UBM Layer System
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Abstract
Etching solution for etching a layer system that has at least one layer of aluminum, at least one layer of copper and at least one third layer, selected from nickel vanadium, nickel and alloys thereof, which is arranged between the at least one aluminum layer and the at least one copper layer, wherein the solution contains phosphoric acid, nitric acid, deionized water and at least one salt that can release halogen ions, or comprises these components. The claimed etching solution is the basis for a one-step structuring method of a UBM layer system which is used in the production of components that are produced by semiconductor technology methods.
27 Citations
68 Claims
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1-46. -46. (canceled)
- 47. Etching solution for etching a layer system comprising phosphoric acid, nitric acid, deionized water and at least one salt that can release halogen ions and cations of which are selected from aluminum, nickel, and vanadium.
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56. Method for structuring a layer system that includes at least one layer of aluminum, at least one layer of copper and at least one third layer arranged between the at least one aluminum layer and the at least one copper layer, the at least one third layer being selected from nickel vanadium, nickel and alloys thereof, comprising the following:
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providing a substrate with the layer system including at least one layer of aluminum, at least one layer of copper and at least one third layer arranged between the at least one aluminum layer and the at least one copper layer, the at least one third layer being selected from nickel vanadium, nickel and alloys thereof; arranging or producing an etching mask on a surface of the layer system so that the etching mask covers the at least one copper layer at least in part; etching at least two layers of the layer system with an etching solution containing phosphoric acid, nitric acid, deionized water and at least one halogen component that can release halogen ions, or comprising halogen ions; rinsing the etched layer system with water and/or a base; drying the etched layer system; and removing the etching mask. - View Dependent Claims (57, 58, 60)
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59. (canceled)
- 61. A method of etching a layer system that includes at least one layer of aluminum, at least one layer of copper and at least one third layer which is arranged between the at least one aluminum layer and the at least one copper layer, the at least one third layer being selected from nickel vanadium, nickel and alloys thereof, comprising etching the layer system with an etching solution containing phosphoric acid, nitric acid, deionized water and at least one halogen component, and the at least one halogen component comprising at least one salt that can release halogen ions, or comprising halogen ions.
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64. (canceled)
Specification