METHOD FOR MANUFACTURING A PRINTED CIRCUIT BOARD WITH A THIN FILM CAPACITOR EMBEDDED THEREIN HAVING A DIELECTRIC FILM BY USING LASER LIFT-OFF, AND PRINTED CIRCUIT BOARD WITH A THIN FILM CAPACITOR EMBEDDED THEREIN MANUFACTURED THEREBY
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Abstract
A method for manufacturing a printed circuit board with a capacitor embedded therein which has a dielectric film using laser lift off, and a capacitor manufactured thereby. In the method, a dielectric film is formed on a transparent substrate and heat-treated. A first conductive layer is formed on the heat-treated dielectric film. A laser beam is irradiated onto a stack formed, from below the transparent substrate, to separate the transparent substrate from the stack. After the transparent substrate is separated from the stack, a second conductive layer is formed with a predetermined pattern on the dielectric film. Also, an insulating layer and a third conductive layer are formed on the first and second conductive layers to alternate with each other in a predetermined number.
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Citations
40 Claims
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1-13. -13. (canceled)
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14. A method for manufacturing a printed circuit board with a thin film capacitor embedded therein, the method comprising:
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forming a dielectric film on a transparent substrate and heat-treating the dielectric film; forming a first conductive layer on the heat-treated dielectric film; forming an insulating layer on the conductive layer and stacking a copper clad laminate on the insulating layer; irradiating a laser beam onto a stack formed, from below the transparent substrate, to separate the transparent substrate from the stack; and after transparent substrate is separated from the stack, forming a second conductive layer with a predetermined pattern on the dielectric film. - View Dependent Claims (15, 18, 19, 21, 22, 23, 24, 25, 26, 40)
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- 16. The method according to claim 16, wherein the dielectric film comprises one dielectric composition selected from a group consisting of lead zirconium titanate, barium titanate, strontium bismuth tantalate, bismuth lanthanum titanate, lead magnesium niobate-lead titanate, and lead zinc niobate-lead titanate.
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20. The method according to claim 20, wherein at least one of the first and second conductive layer is formed by the PVD using sputtering or e-beam.
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27-39. -39. (canceled)
Specification