TWO-AXIS DIRECT FLUID SHEAR STRESS SENSOR

• US 20090223302A1
• Filed: 12/03/2008
• Published: 09/10/2009
• Est. Priority Date: 12/03/2007
• Status: Active Grant

• Current Assignee: United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration
• Original Assignee: Space Admi, The Government of The US As Represented By The Secretary of The Navy
• Inventors: Adcock, Edward, Bajikar, Sateesh, Scott, Michael A.
• Granted Patent: US 7,921,731 B2
• Time in Patent Office: Days
• US Class Current: 73/841
• CPC Class Codes: G01L 1/18 using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
• CPC Class Codes: G01L 5/162 of piezoresistors
• CPC Class Codes: G01N 11/00 Investigating flow properties of materials, e.g. viscosity, plasticity; Analysing materials by determining flow properties
• CPC Class Codes: G01N 13/00 Investigating surface or boundary effects, e.g. wetting power; Investigating diffusion effects; Analysing materials by determining surface, boundary, or diffusion effects scanning-probe techniques or apparatus G01Q
• CPC Class Codes: G01N 2203/0623 using piezoelectric gauges

Abstract

A micro sized multi-axis semiconductor skin friction/wall shear stress induced by fluid flow. The sensor design includes a shear/strain transduction gimble connected to a force collecting plate located at the flow boundary surface. The shear force collecting plate is interconnected by an arm to offset the tortional hinges from the fluid flow. The arm is connected to the shear force collecting plate through dual axis torsional hinges with piezoresistive torsional strain gauges. These gauges are disposed on the tortional hinges and provide a voltage output indicative of applied shear stress acting on the force collection plate proximate the flow boundary surface. Offsetting the torsional hinges creates a force concentration and resolution structure that enables the generation of a large stress on the strain gauge from small shear stress, or small displacement of the collecting plate. The design also isolates the torsional sensors from exposure to the fluid flow.

Claims

1. A multi-axis direct shear stress sensor comprising:

a shear force collecting plate mounted substantially flush and coplanar with an adjacent associated wall exposed to fluid flow;

a multi-axis torsional sensor to measure torsional strain about at least two axis;

a gimbal structure including an arm interconnecting said shear force collecting plate and said multi-axis torsional sensor to thereby facilitate pivotal movement of said shear force collecting plate in response to fluid flow across a surface thereof;

wherein said pivotal movement of said shear force collecting plate causes deformation of said torsional sensor thereby inducing said torsional strain therein.

2. The sensor according to claim 1, wherein arm has a length of at least 400 mm and extends substantially perpendiculary between respective surfaces of said shear force collecting plate and said multi-axis torsional sensor to substantially isolate said sensor from said fluid flow.

3. The sensor according to claim 1, wherein said multi-axis torsional sensor is a piezoelectric torsional strain sensor.

4. The sensor according to claim 1, wherein said torsional sensor is a semiconductor material made of silicon.

5. The sensor according to claim 4, wherein said torsional sensor includes at least one hinge integrated in said semiconductor material with selective doped portions thereof and having electrical contacts disposed thereon.

6. The sensor according to claim 4, wherein said torsional sensors further includes two hinges orthogonally arranged with respect to one another, said two hinges forming said connection between said torsional sensor and said arm.

7. The sensor according to claim 2, further including a single crystal silicon having said piezoelectric sensor disposed thereon whereby said sensor produces an electrical output in response to electrical current input, said output signal being proportional to the strain induced on an associated hinge of said torsional sensor.

8. The sensor according to claim 5, wherein portions of said semi-conducting material are etched to define said hinges.