ORGANIC THIN FILM TRANSISTORS INCLUDING METAL OXIDE NANOPARTICLES WITHIN A PHOTOCURABLE TRANSPARENT POLYMER GATE INSULATOR LAYER AND METHOD FOR FABRICATING THE SAME BY USING SOL-GEL AND PHOTOCURING REACTIONS

• US 20090224234A1
• Filed: 01/28/2009
• Published: 09/10/2009
• Est. Priority Date: 01/29/2008
• Status: Active Grant

• Current Assignee: Korea Advanced Institute of Science and Technology
• Original Assignee: Korea Advanced Institute of Science and Technology
• Inventors: Choi, June Whan, Kim, Jai Kyeong, Kim, Dong Young, Yoon, Ho Gyu
• Granted Patent: US 7,897,430 B2
• Time in Patent Office: Days
• US Class Current: 257/40
• CPC Class Codes: C01G 1/02 Oxides
• CPC Class Codes: C01G 23/053 Producing by wet processes, e.g. hydrolysing titanium salts
• CPC Class Codes: H10K 10/478 the gate dielectric comprising a layer of composite material comprising interpenetrating or embedded materials, e.g. TiO2 particles in a polymer matrix

Abstract

The present invention relates to an organic thin film transistor comprising a photocurable transparent inorganic/polymer composite layer as a gate insulator layer in which metal oxide nanoparticles are generated within a photocurable transparent polymer through sol-gel and photocuring reactions and whose permittivity is easily regulated; and a fabrication method thereof. Since the organic thin film transistor according to the present invention utilizes the photocurable transparent inorganic/polymer composite layer showing a significantly high and readily controllable permittivity as a gate insulator, it is capable of operating under low voltage conditions and has a high on/off current ratio due to low leakage current. Further, the organic thin film transistor according to the present invention preserves the unique properties of the photocurable transparent polymer, enabling the formation of a photocurable micropattern of a gate insulator having high processibility

Claims

1. An organic thin film transistor comprising a substrate, a gate electrode layer formed on said substrate, a photocurable transparent inorganic/polymer composite layer including metal oxide nanoparticles formed on said substrate and gate electrode, an organic activation layer formed on said composite layer and a source-drain electrode layer formed on said activation layer,

wherein the photocurable transparent inorganic/polymer composite layer including metal oxide nanoparticles is prepared to exhibit dielectric properties by mixing a metal oxide precursor and a photocurable transparent polymer, coating the mixture on the substrate and gate electrode to form an organic film, and converting a part of the organic film into nano-inorganic particles through sol-gel and photocuring reactions.

2. The organic thin film transistor according to claim 1, wherein the substrate and gate electrode layer are in the form of a transparent glass substrate or a transparent flexible polymer substrate deposited with a metal electrode.

3. The organic thin film transistor according to claim 2, wherein the transparent flexible polymer substrate is selected from the group consisting of polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), polycarbonate (PC), and polyethylene sulfone (PES).

4. The organic thin film transistor according to claim 2, wherein the metal electrode is made of a metal selected from the group consisting of gold (Au), silver (Ag), chrome (Cr), cobalt (Co), copper (Cu), nickel (Ni), zinc (Zn), molybdenum (Mo), aluminum (Al), titanium (Ti), any mixtures thereof, and any alloys thereof.

5. The organic thin film transistor according to claim 1, wherein the substrate and gate electrode layer is in the form of a transparent glass substrate or a transparent flexible polymer substrate coated with a conductive thin film.

6. The organic thin film transistor according to claim 5, wherein the transparent flexible polymer substrate is selected from the group consisting of polyethylene terephthalate (PET), polymethyl methacrylate (PMMA), polycarbonate (PC), and polyethylene sulfone (PES).

7. The organic thin film transistor according to claim 5, wherein the conductive thin film is a thin film coated with ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IZTO (Indium Zinc Tin oxide), FTO (F-doped SnO₂), ITO/ATO (Antimony Tin Oxide), or ITO/FTO.

8. The organic thin film transistor according to claim 1, wherein the metal oxide nanoparticle is selected from the group consisting of titanium (Ti) alkoxides, zinc (Zn) alkoxides, tin (Sn) alkoxides, niobium (Nb) alkoxides, tungsten (W) alkoxides, strontium (Sr) alkoxides, and zirconium (Zr) alkoxides.

9. The organic thin film transistor according to claim 1, wherein the organic activation layer is made of a low molecular organic semi-conductive material or a polymer semi-conductive material.

10. The organic thin film transistor according to claim 9, wherein the semi-conductive material is selected from the group consisting of pentacene, oligothiophene, regioregular poly(3-alkylthiophene), and poly(3-hexylthiophene).

11. A method of fabricating the organic thin film transistor according to claim 1, which comprises the following steps:

1) forming a gate electrode on a substrate;

2) forming a photocurable transparent inorganic/polymer composite layer including metal oxide nanoparticles on said substrate and said gate electrode;

3) forming an organic activation layer on said photocurable transparent inorganic/polymer composite layer; and

4) forming a source-drain electrode layer on said organic activation layer, wherein step

     2) is carried out by mixing a metal oxide precursor, a reaction regulator, a catalyst and a photocurable polymer, coating the mixture on the substrate and gate electrode, and performing sol-gel and photocuring reactions.

12. The method according to claim 11, wherein the photocurable transparent inorganic/polymer composite layer including metal oxide nanoparticles in step 2) is formed by the following steps:

a) mixing a metal oxide precursor and a reaction regulator to substitute an alkoxide group of said metal oxide precursor;

b) adding a catalyst and a photocurable transparent polymer to said mixture;

c) coating the resulting mixture on a substrate and a gate electrode formed on said substrate and performing a sol-gel reaction of said coating layer; and

d) carrying out a photocuring reaction of said sol-gel layer coated on the substrate using a pattern mask and developing the same.

13. The method according to claim 12, wherein the metal oxide nanoparticle is selected from the group consisting of titanium (Ti) alkoxides, zinc (Zn) alkoxides, tin (Sn) alkoxides, niobium (Nb) alkoxides, tungsten (W) alkoxides, strontium (Sr) alkoxides and zirconium (Zr) alkoxides.

14. The method according to claim 12, wherein the reaction regulator is acetic acid or acetylacetone capable of substituting an alkoxide group of the metal oxide precursor.

15. The method according to claim 12, wherein the molar ratio of the reaction regulator to the metal oxide precursor is in the range from 1:

0.5 to 1;

1.5.

16. The method according to claim 12, wherein the catalyst is selected from the group consisting of hydrochloric acid, sulfuric acid, nitric acid, sodium hydroxide, potassium hydroxide, and ammonia.

17. The method according to claim 16, wherein the catalyst is added in a concentration ranging from 0.01 to 0.5 N.

18. The method according to claim 12, wherein the mass ratio of the catalyst to the reaction regulator is in the range from 1:

0.1 to 1;

1.

19. The method according to claim 12, wherein the photocurable transparent polymer is selected from the group consisting of unsaturated polyester polymers, acrylic polymers, epoxy polymers, and polyvinylalcohol polymers.

20. The method according to claim 12, wherein the mass ratio of the metal oxide precursor to the photocurable transparent polymer is in the range from 1:

0.01 to 1;

0.5.

21. The method according to claim 12, wherein the sol-gel reaction is carried out at a temperature ranging from 80 to 150°

C. for 1 to 300 minutes.

22. The method according to claim 12, wherein the photocuring reaction is carried out at a wavelength ranging from 200 to 400 nm and a dose ranging from 100 to 400 mJ.

23. The method according to claim 12, wherein the photocurable transparent inorganic/polymer composite layer has a thickness ranging from 400 to nm, a density ranging from 0.9 to 3.0 g/cm, a dielectric constant ranging from 4 to 15, and an average particle size ranging from 5 to 20 nm.