THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE USING THE SAME
First Claim
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1. A thin film transistor comprising:
- a semiconductor layer;
a source electrode and a drain electrode that each are connected to the semiconductor layer;
an insulating layer that is formed adjacent to the semiconductor layer; and
a gate electrode that faces the semiconductor layer across the insulating layer,wherein the semiconductor layer includes an aggregate of semiconductor fine particles composed of a complex oxide, andthe complex oxide contains zinc and at least one selected from a group consisting of indium, gallium, and rhodium.
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Abstract
A thin film transistor according to the present invention includes: a semiconductor layer (5); a source electrode (3s) and a drain electrode (3d) that each are connected to the semiconductor layer (5); an insulating layer (6) that is formed adjacent to the semiconductor layer (5); and a gate electrode (7) that faces the semiconductor layer (5) across the insulating layer (6). The semiconductor layer (5) includes an aggregate of semiconductor fine particles composed of a complex oxide. The complex oxide contains zinc and at least one selected from a group consisting of indium, gallium and rhodium.
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Citations
10 Claims
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1. A thin film transistor comprising:
- a semiconductor layer;
a source electrode and a drain electrode that each are connected to the semiconductor layer;
an insulating layer that is formed adjacent to the semiconductor layer; and
a gate electrode that faces the semiconductor layer across the insulating layer,wherein the semiconductor layer includes an aggregate of semiconductor fine particles composed of a complex oxide, and the complex oxide contains zinc and at least one selected from a group consisting of indium, gallium, and rhodium. - View Dependent Claims (2, 3, 4, 5, 8, 9, 10)
- a semiconductor layer;
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6. A method of manufacturing a thin film transistor including a semiconductor layer, the method comprising the steps of
(i) forming a layer including an aggregate of semiconductor fine particles composed of a complex oxide by using a liquid that contains the semiconductor fine particles composed of the complex oxide; - and
(ii) forming the semiconductor layer by subjecting the layer including the aggregate of the semiconductor fine particles to a heat treatment at a temperature of 150°
C. or higher,wherein the complex oxide contains zinc and at least one selected from a group consisting of indium, gallium, and rhodium. - View Dependent Claims (7)
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Specification