THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE USING THE SAME

• US 20090224239A1
• Filed: 06/14/2007
• Published: 09/10/2009
• Est. Priority Date: 06/19/2006
• Status: Active Grant

• Current Assignee: Samsung Display Company Limited (Samsung Group)
• Original Assignee: Panasonic Corporation (Panasonic Holdings Corporation)
• Inventors: Wakita, Naohide
• Granted Patent: US 8,013,331 B2
• Time in Patent Office: Days
• US Class Current: 257/43
• CPC Class Codes: B82Y 10/00 Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
• CPC Class Codes: G02F 1/1368 in which the switching element is a three-electrode device G02F1/136277 takes precedence
• CPC Class Codes: G02F 2202/36 Micro- or nanomaterials
• CPC Class Codes: H01L 29/0665 the shape of the body defining a nanostructure nanotechnology per se B82B
• CPC Class Codes: H01L 29/0669 Nanowires or nanotubes carbon nanotubes as material of solid-state device active part H10K85/211
• CPC Class Codes: H01L 29/0673 oriented parallel to a substrate
• CPC Class Codes: H01L 29/41733 for thin film transistors with insulated gate
• CPC Class Codes: H01L 29/7869 having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

A thin film transistor according to the present invention includes: a semiconductor layer (5); a source electrode (3s) and a drain electrode (3d) that each are connected to the semiconductor layer (5); an insulating layer (6) that is formed adjacent to the semiconductor layer (5); and a gate electrode (7) that faces the semiconductor layer (5) across the insulating layer (6). The semiconductor layer (5) includes an aggregate of semiconductor fine particles composed of a complex oxide. The complex oxide contains zinc and at least one selected from a group consisting of indium, gallium and rhodium.

Claims

1. A thin film transistor comprising:

a semiconductor layer;

a source electrode and a drain electrode that each are connected to the semiconductor layer;

an insulating layer that is formed adjacent to the semiconductor layer; and

a gate electrode that faces the semiconductor layer across the insulating layer,

wherein the semiconductor layer includes an aggregate of semiconductor fine particles composed of a complex oxide, and

the complex oxide contains zinc and at least one selected from a group consisting of indium, gallium, and rhodium.

2. The thin film transistor according to claim 1,

wherein the complex oxide has a composition represented by InGaO₃(ZnO)_m (m is a natural number of 10 or less), or ZnO.Rh₂O₃.

3. The thin film transistor according to claim 1,

wherein the semiconductor fine particles each are composed of a crystal of the complex oxide.

4. The thin film transistor according to claim 1,

wherein the semiconductor fine particles have an average particle diameter of not greater than 50 nm.

5. The thin film transistor according to claim 1,

wherein a surfactant is adsorbed on the surface of the semiconductor fine particles.

8. An electronic device comprising an electronic circuit,

wherein the electronic circuit includes the thin film transistor according to claim 1.

9. The electronic device according to claim 8,

wherein the electronic device is a display device.

10. The electronic device according to claim 8,

wherein the electronic device is a mobile terminal.

6. A method of manufacturing a thin film transistor including a semiconductor layer, the method comprising the steps of

(i) forming a layer including an aggregate of semiconductor fine particles composed of a complex oxide by using a liquid that contains the semiconductor fine particles composed of the complex oxide;

and

(ii) forming the semiconductor layer by subjecting the layer including the aggregate of the semiconductor fine particles to a heat treatment at a temperature of 150°

C. or higher,

wherein the complex oxide contains zinc and at least one selected from a group consisting of indium, gallium, and rhodium.

7. The manufacturing method according to claim 6,

wherein the liquid contains a surfactant.