SILICON SUBSTRATE AND MANUFACTURING METHOD THEREOF
First Claim
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1. A first silicon substrate comprising:
- a silicon substrate, an n+ epitaxial layer, and an n epitaxial layer,wherein the silicon substrate manufactured from a single crystal silicon produced by a CZ method which includes phosphorus (P), a carbon concentration that is greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1017 atoms/cm3, and an oxygen concentration that is greater than or equal to 1.4×
1018 atoms/cm3 and less than or equal to 1.6×
1018 atoms/cm3;
the n+ epitaxial layer that is doped with phosphorus (P) at a concentration greater than or equal to 1.0×
1018 atoms/cm3 and is formed on the silicon substrate; and
the n epitaxial layer that is doped with phosphorus (P) at a concentration in the range of 1.0×
1016 atoms/cm3 to 1.0×
1018 atoms/cm3 and is formed on the n+ epitaxial layer.
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Abstract
A silicon substrate is manufactured from a single crystal silicon that is doped with phosphorus (P) and is grown by a CZ method to have a predetermined carbon concentration and a predetermined initial oxygen concentration. An n+ epitaxial layer or an n+ implantation layer that is doped with phosphorus (P) at a predetermined concentration or more is formed on the silicon substrate. An n epitaxial layer that is doped with phosphorus (P) at a predetermined concentration is formed on the n+ layer.
20 Citations
16 Claims
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1. A first silicon substrate comprising:
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a silicon substrate, an n+ epitaxial layer, and an n epitaxial layer, wherein the silicon substrate manufactured from a single crystal silicon produced by a CZ method which includes phosphorus (P), a carbon concentration that is greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1017 atoms/cm3, and an oxygen concentration that is greater than or equal to 1.4×
1018 atoms/cm3 and less than or equal to 1.6×
1018 atoms/cm3;the n+ epitaxial layer that is doped with phosphorus (P) at a concentration greater than or equal to 1.0×
1018 atoms/cm3 and is formed on the silicon substrate; andthe n epitaxial layer that is doped with phosphorus (P) at a concentration in the range of 1.0×
1016 atoms/cm3 to 1.0×
1018 atoms/cm3 and is formed on the n+ epitaxial layer. - View Dependent Claims (2, 3)
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4. A method of manufacturing a first silicon substrate, comprising:
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a preparation step of growing a single crystal silicon that is doped with phosphorus (P) and has a carbon concentration that is greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1017 atoms/cm3 and an initial oxygen concentration that is greater than or equal to 1.4×
1018 atoms/cm3 and less than or equal to 1.6×
1018 atoms/cm3 using a CZ method, and slicing the single crystal silicon;a step of forming an n+ epitaxial layer that is doped with phosphorus (P) at a concentration greater than or equal to 1.0×
1019 atoms/cm3 on the sliced single crystal silicon; anda step of forming a n epitaxial layer that is doped with phosphorus (P) at a concentration greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1018 atoms/cm3 on the n+ epitaxial layer. - View Dependent Claims (5, 6, 7)
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8. A second silicon substrate comprising:
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a silicon substrate, an n+ implantation layer, and an n epitaxial layer, wherein the silicon substrate manufactured from a single crystal silicon produced by CZ method which includes phosphorus (P), a carbon concentration that is greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.6×
1017 atoms/cm3, and an oxygen concentration that is greater than or equal to 1.4×
1018 atoms/cm3 and less than or equal to 1.6×
1018 atoms/cm3;the n+ implantation layer that is doped with an n type dopant at a concentration greater than or equal to 1.0×
1018 atoms/cm3 by ion implantation and is formed on the silicon substrate; andthe n epitaxial layer that is doped with an n type dopant at a concentration greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1018 atoms/cm3 and is formed on the n+ implantation layer. - View Dependent Claims (9, 10)
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11. A method of manufacturing a second silicon substrate, comprising:
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a preparation step of growing a single crystal silicon that is doped with phosphorus (P) and has a carbon concentration that is greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.6×
1017 atoms/cm3 and an initial oxygen concentration that is greater than or equal to 1.4×
1018 atoms/cm3 and less than or equal to 1.6×
1018 atoms/cm3 using a CZ method, and slicing the single crystal silicon;an implantation step of implanting an n type dopant into the surface of the sliced single crystal silicon at a concentration that is greater than or equal to 1.0×
1018 atoms/cm3 to form an n+ implantation layer; andan epitaxial step of forming a n epitaxial layer that is doped with an n type dopant at a concentration greater than or equal to 1.0×
1016 atoms/cm3 and less than or equal to 1.0×
1017 atoms/cm3 on the n+ implantation layer. - View Dependent Claims (12, 13, 14, 15, 16)
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Specification