IMAGING DEVICE

• US 20090225210A1
• Filed: 03/04/2009
• Published: 09/10/2009
• Est. Priority Date: 02/27/2004
• Status: Active Grant

• Current Assignee: National University Corporation Chiba University
• Original Assignee: National University Corporation Chiba University
• Inventors: SUGAWA, Shigetoshi
• Granted Patent: US 7,820,467 B2
• Time in Patent Office: Days
• US Class Current: 348/308
• CPC Class Codes: H01L 27/14603 Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H04N 25/59 by controlling the amount of charge storable in the pixel, e.g. modification of the charge conversion ratio of the floating node capacitance
• CPC Class Codes: H04N 25/76 Addressed sensors, e.g. MOS or CMOS sensors
• CPC Class Codes: H04N 25/771 comprising storage means other than floating diffusion

Abstract

A solid-state imaging device, a line sensor and an optical sensor for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio, and a method of operating a solid-state imaging device for enhancing a wide dynamic range while keeping high sensitivity with a high S/N ratio are provided. The solid-state imaging device comprises an integrated array of a plurality of pixels, each of which comprises a photodiode PD for receiving light and generating photoelectric charges, a transfer transistor Tr1 for transferring the photoelectric charges, and a storage capacitor element C connected to the photodiode PD at least through the transfer transistor Tr1 for accumulating, at least through the transfer transistor Tr1, the photoelectric charge overflowing from the photodiode PD during accumulating operation.

Claims

1. A method of operating a solid-state imaging device having an integrated array of a plurality of pixels, each pixel having a photodiode for receiving light and generating photoelectric charges, a transfer transistor for transferring the photoelectric charges, a storage transistor, a floating region coupled to the photodiode via the transfer transistor, and a storage capacitor element for accumulating photoelectric charges overflowing from the photodiode via the transfer transistor and the storage transistor during an accumulating operation, the storage transistor controllably coupling or splitting potentials of the storage capacitor element and the floating region, the operating method comprising the steps of:

turning off the transfer transistor and turning on the storage transistor for discharging the photoelectric charges of the floating region and the storage capacitor element, prior to accumulating charges;

reading out a voltage signal at a reset level of the floating region and the storage capacitor element;

accumulating, in the photodiode, pre-saturated charges among the photoelectric charges generated in the photodiode and accumulating, in the floating region and the storage capacitor element, supersaturated charges overflowing from the photodiode;

turning off the storage transistor to split potentials of the floating region and the storage capacitor element and discharging the photoelectric charges in the floating region;

reading out a voltage signal at a reset level of the floating region;

turning on the transfer transistor so as to transfer the pre-saturated charges to the floating region and reading out a voltage signal of the pre-saturated charges; and

turning on the storage transistor to couple the potentials of the floating region and the storage capacitor element for mixing the pre-saturated charges and the supersaturated charges and reading out a voltage signal of a sum of the pre-saturated charges and the supersaturated charges.

2. The method of operating the imaging device according to claim 1, further comprising:

canceling noise of a voltage signal of the pre-saturated charges by taking a difference between a voltage signal of the pre-saturated charges and a voltage signal at a reset level of the floating region;

canceling noise of a voltage signal of a sum of the pre-saturated charges and the supersaturated charges by taking a difference between the voltage signal of the sum of the pre-saturated charges and the supersaturated charges and a voltage signal at a reset level of the floating region and the storage capacitor element;

adjusting a gain of the voltage signal of the sum of the pre-saturated charges and the supersaturated charges so as to make the gain substantially the same as a gain of the voltage signal of the pre-saturated charges; and

selecting either one of the noise-cancelled voltage signal of the pre-saturated charges and the noise-cancelled voltage signal of the sum of the pre-saturated charges and the supersaturated charges by comparing with a reference voltage.

3. The method of operating the imaging device according to claim 1, wherein:

the step of accumulating in the photodiode the pre-saturated charges among photoelectric charges generated in the photodiode and accumulating in the floating region and the storage capacitor element the supersaturated charges overflowing from the photodiode comprises the step of;

adjusting the potential of the transfer transistor to a level for completely turning off the transfer transistor or a level lower than that level.

4. A method of operating a solid-state imaging device having an integrated array of a plurality of pixels, each pixel having a photodiode for receiving light and generating photoelectric charges, a transfer transistor for transferring the photoelectric charges, a storage transistor, a floating region coupled to the photodiode via the transfer transistor, and a storage capacitor element accumulating photoelectric charges overflowing from the photodiode via the transfer transistor and the storage transistor during an accumulating operation, the storage transistor controllably coupling or splitting potentials of the floating region and the storage capacitor element, the operating method comprising:

turning off the transfer transistor and turning on the storage transistor for discharging the photoelectric charges of the floating region and the storage capacitor element, prior to accumulating charges;

reading out a voltage signal at a reset level of the floating region and the storage capacitor element;

accumulating in the photodiode pre-saturated charges among the photoelectric charges generated in the photodiode and accumulating in the floating region and the storage capacitor element supersaturated charges overflowing from the photodiode;

turning off the storage transistor to split potentials of the floating region and the storage capacitor element and reading out a voltage signal at a pre-transfer level of the pre-saturated charges in the floating region;

turning on the transfer transistor for transferring the pre-saturated charges to the floating region and reading out a voltage signal at a post-transfer level of the pre-saturated charges and,

turning on the storage transistor to couple the potentials of the floating region and the storage capacitor element for mixing the pre-saturated charges and the supersaturated charges and reading out a voltage signal of a sum of the pre-saturated charges and the supersaturated charges.

5. The method of operating the imaging device according to claim 4, further comprising the steps of:

canceling noise of a voltage signal of the pre-saturated charges by taking a difference between a voltage signal at the post-transfer level of the pre-saturated charges and a voltage signal at the pre-transfer level of the pre-saturated charges;

canceling noise of a voltage signal of a sum of the pre-saturated charges and the supersaturated charges by taking a difference between the voltage signal of the sum of the pre-saturated charges and the supersaturated charges and a voltage signal at a reset level of the floating region and the storage capacitor element;

adjusting a gain of the voltage signal of the sum of the pre-saturated charges and the supersaturated charges so as to make the gain substantially the same as a gain of the voltage signal of the pre-saturated charges; and

selecting either one of the noise-cancelled voltage signal of the pre-saturated charges and the noise-cancelled voltage signal of the sum of the pre-saturated charges and the supersaturated charges by comparing with a reference voltage.

6. The method of operating the imaging device according to claim 4, wherein:

the step of accumulating in the photodiode pre-saturated charges among photoelectric charges generated in the photodiode and accumulating, in the floating region and the storage capacitor element, supersaturated charges overflowing from the photodiode comprises the step of;

adjusting the potential of the transfer transistor to a level for completely turning off the transfer transistor or a level lower than that level.