X-Y ADDRESS TYPE SOLID STATE IMAGE PICKUP DEVICE AND METHOD OF PRODUCING THE SAME
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Abstract
In an X-Y address type solid state image pickup device represented by a CMOS image sensor, a back side light reception type pixel structure is adopted in which a wiring layer is provided on one side of a silicon layer including photo-diodes formed therein, and visible light is taken in from the other side of the silicon layer, namely, from the side (back side) opposite to the wiring layer. Wiring can be made without taking a light-receiving surface into account, and the degree of freedom in wiring for the pixels is enhanced.
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Citations
10 Claims
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1-6. -6. (canceled)
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7. A method of producing a solid state image pickup device comprising a plurality of unit pixels each comprising an active device for converting a signal charge obtained though photo-electric conversion by a photo-electric conversion device into an electrical signal and outputting said electrical signal,
said unit pixels being arranged on a matrix form, said method comprising sequentially: -
a first step of forming said photo-electric conversion devices and said active devices; a second step of forming a wiring layer comprising wirings for said active devices, on one side of a device layer comprising said photo-electric conversion devices and said active devices; and a third step of polishing the other side of said device layer so that the thickness of said substrate becomes a predetermined thickness. - View Dependent Claims (8, 9, 10)
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Specification