COUNTERDOPING FOR SOLAR CELLS

• US 20090227095A1
• Filed: 03/04/2009
• Published: 09/10/2009
• Est. Priority Date: 03/05/2008
• Status: Abandoned Application

• Current Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Original Assignee: Varian Semiconductor Equipment Associates Incorporated (Applied Materials Incorporated)
• Inventors: Sullivan, Paul, Gupta, Atul, Bateman, Nicholas
• Application Number:
  US12/397,646
• Publication Number:
  US 20090227095A1
• Time in Patent Office: Days
• US Class Current: 438/514
• CPC Class Codes: H01L 31/022441 Electrode arrangements specially adapted for back-contact solar cells
• CPC Class Codes: H01L 31/0682 back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
• CPC Class Codes: H01L 31/1804 comprising only elements of Group IV of the Periodic Table
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Methods of counterdoping a solar cell, particularly an IBC solar cell are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. Traditionally, a plurality of lithography and doping steps are required to achieve this desired configuration. In contrast, one lithography step can be eliminated by the use of a blanket doping of one conductivity and a mask patterned counterdoping process of the opposite conductivity. The areas dosed during the masked patterned doping receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In another embodiment, the counterdoping is performed by means of a direct patterning technique, thereby eliminating the remaining lithography step. Various methods of direct counterdoping processes are disclosed.

Claims

1. A method of creating regions of opposite conductivity on the surface of a solar cell comprising:

utilizing a semiconductor substrate;

performing a blanket doping of a first dopant on said surface of said substrate, such that said surface comprises a uniformly doped region;

performing a patterned doping of a second dopant on a portion of said surface, wherein said portion is less than the entirety of said surface, said first dopant and said second dopant comprising opposite conductivities, and said portion undergoing said patterned doping maintaining the conductivity of said second dopant; and

applying a mask in front of said substrate prior to said patterned doping.

2. The method of claim 1, wherein said blanket doping is performed via furnace diffusion.

3. The method of claim 1, wherein said blanket doping is performed via ion implantation.

4. The method of claim 1, wherein said blanket doping is performed via plasma doping.

5. The method of claim 1, wherein said mask is selected from the group consisting of a hard mask, a shadow mask and a projection mask.

6. The method of claim 1, wherein said patterned doping is performed via furnace diffusion.

7. The method of claim 1, wherein said patterned doping is performed via ion implantation.

8. The method of claim 1, wherein said patterned doping is performed via plasma doping.

9. A method of creating regions of opposite conductivity on the surface of a solar cell comprising:

utilizing a semiconductor substrate;

performing a blanket doping of a first dopant on said surface of said substrate, such that said surface comprises a uniformly doped region;

performing a direct patterned doping of a second dopant on a portion of said surface, wherein said portion is less than the entirety of said surface, said first dopant and said second dopant comprising opposite conductivities, and said portion undergoing said patterned doping maintaining the conductivity of said second dopant, whereby said blanket doping and said direct patterned doping are performed without the application of a mask onto said substrate.

10. The method of claim 9, wherein said blanket doping is performed via furnace diffusion.

11. The method of claim 9, wherein said blanket doping is performed via ion implantation.

12. The method of claim 9, wherein said blanket doping is performed via plasma doping.

13. The method of claim 9, further comprising applying a dielectric layer prior to said direct patterned doping, and wherein said direct patterned doping comprises using a laser to selectively melt said dielectric layer so as to expose said portion of said substrate, and subsequently performing a blanket doping of said second dopant.

14. The method of claim 9, wherein said direct patterned doping comprises applying a blanket layer of paste comprising said second dopant, and melting said paste by using a laser beam to direct write only said portion of said substrate.

15. The method of claim 9, wherein said direct patterned doping is performed using an ion beam and comprises modulating the speed which said substrate travels through said ion beam.

16. The method of claim 9, wherein said direct patterned doping comprises using a scanned ion beam and modulating the scan rate of said beam.

17. The method of claim 9, wherein said direct patterned doping comprises using an ion implantation system comprising extraction electrodes to produce an ion beam, and modulating the voltage of said electrodes, such that the ion beam current is modulated.

18. The method of claim 9, wherein said direct patterned doping comprises melting said substrate using a laser in said portion and simultaneously introducing said second dopant into said melted portion.

19. The method of claim 9, wherein said direct patterned doping comprises selectively applying paste to said portion of said substrate and diffusing said paste using a furnace.

20. A method of creating regions of opposite conductivity on the surface of a solar cell comprising:

utilizing a semiconductor substrate;

performing a blanket doping of a first dopant on said surface of said substrate, such that said surface comprises a uniformly doped region;

performing a patterned ion implant of a second dopant on a portion of said surface, wherein said portion is less than the entirety of said surface, said first dopant and said second dopant comprising opposite conductivities, and said portion undergoing said patterned implant maintaining the conductivity of said second dopant; and

applying a mask in front of said substrate prior to said patterned ion implant.