HIGH-SPEED SOLID STATE STORAGE SYSTEM HAVING A HIERARCHY OF DIFFERENT CONTROL UNITS THAT PROCESS DATA IN A CORRESPONDING MEMORY AREA AND METHOD OF CONTROLLING THE SAME

• US 20090228637A1
• Filed: 12/29/2008
• Published: 09/10/2009
• Est. Priority Date: 03/10/2008
• Status: Abandoned Application

• Current Assignee: PaxDisk Co., Ltd., Hynix Semiconductor Incorporated (SK Hynix Inc.)
• Original Assignee: PaxDisk Co., Ltd.
• Inventors: YI, Dae Hee, MOON, Yang Gi
• Application Number:
  US12/344,728
• Publication Number:
  US 20090228637A1
• Time in Patent Office: Days
• US Class Current: 711/103
• CPC Class Codes: G06F 11/1068 in sector programmable memories, e.g. flash disk G06F11/1072 takes precedence
• CPC Class Codes: G11C 2029/0409 Online test
• CPC Class Codes: G11C 2029/0411 Online error correction
• CPC Class Codes: G11C 29/765 in solid state disks

Abstract

A solid state storage system having a hierarchy of different control units that systematically process data in a corresponding memory area is disclosed. The solid state storage system includes

• • a first control unit and at least one second control unit. The first control unit distributes and transmits external command signals that are provided from a host interface. The second control unit is controlled by the first control unit and performs an address mapping operation, an error checking/correcting operation, an ad defective block managing operation on a corresponding plurality of memory chips in the memory area.

Claims

1. A solid state storage system comprising:

a first control unit that distributes and transmits signals that are provided from a host interface; and

a second control unit controlled by the first control unit such that the second control unit performs an address mapping operation, an error checking/correcting operation, and a defective block managing operation on a plurality of memory chips.

2. The solid state storage system of claim 1,

wherein the second control unit includes a plurality of sub-control units that are simultaneously driven so as to control a plurality of groups of memory chips.

3. The solid state storage system of claim 1,

wherein the second control unit includes any one of a NAND flash controller, a solid state drive (SDD), and a flash card.

4. The solid state storage system of claim 1,

wherein each of the memory chips includes a NAND flash memory.

5. A solid state storage system comprising:

a host interface;

a first control unit that responds to signals transmitted from the host interface;

a buffer unit interposed between the host interface and the first control unit, such that the buffer unit buffers output signals from the host interface or output signals from the first control unit;

a second control unit activated by the first control unit such that the second control unit directly controls the operation of a memory area; and

the memory area controlled by the second control unit and inputs/outputs data.

6. The solid state storage system of claim 5,

wherein a signal transmission time, corresponding to an interval between the host interface and the first control unit via the buffer unit when a signal is transmitted, is shorter than a data processing time between the second control unit and the memory chips in processing data.

7. The solid state storage system of claim 5,

wherein the first control unit distributes and provides the signals, in response to external commands transmitted from the host interface through the buffer unit, to the second control unit to process the signals in processing data at the memory chips.

8. The solid state storage system of claim 5,

wherein the second control unit includes a plurality of sub-control units that are simultaneously driven.

9. The solid state storage system of claim 8,

wherein the sub-control units are associated to corresponding memory groups, such that each corresponding memory group includes a plurality of grouped memory chips.

10. The solid state storage system of claim 8,

wherein each of the sub-control units performs an address mapping operation, an error checking/correcting operation, and a defective block managing operation on a corresponding memory group having a plurality of grouped memory chips.

11. The solid state storage system of claim 8,

wherein each of the sub-control units includes any one of a NAND flash controller, a solid state drive (SSD), and a flash card.

12. The solid state storage system of claim 5,

wherein the memory area includes a NAND flash memory.

13. A method of controlling a solid state storage system, comprising:

allowing a command, which is received from a host interface, to be simultaneously transmitted to a plurality of sub-control units;

allowing individual sub-control units to perform an address mapping operation on corresponding memory chips;

allowing individual sub-control units to perform an error checking/correcting process when an error occurs while the operation of the corresponding memory chips is performed; and

allowing the individual sub-control units to execute a next command when an error does not occur while the operation of the corresponding memory chips is performed.

14. The method of claim 13, further comprising:

allowing a first control unit to receive a signal from the host interface before the plurality of sub-control units receive the command.

15. The method of claim 14,

wherein a signal transmission time between the first control unit and the host interface is shorter than a data processing time of the second control unit in processing data at the corresponding memory chips.

16. The method of claim 13, further comprising:

allowing the individual sub-control units to manage defective blocks of the corresponding memory chips after performing the error checking/correcting process.