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Two step annealing process for TMR device with amorphous free layer

  • US 20090229111A1
  • Filed: 03/12/2008
  • Published: 09/17/2009
  • Est. Priority Date: 03/12/2008
  • Status: Active Grant
First Claim
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1. An annealing process for a spin valve in a magnetic read head, said spin valve is comprised of a plurality of layers including at least one AFM layer and at least one pinned layer, and has a free layer that includes at least one amorphous layer, comprising:

  • (a) a first anneal step comprised of applying a first temperature and a magnetic field along a certain direction for a first period of time; and

    (b) a second anneal step comprised of applying a second temperature and a magnetic field along said certain direction for a second period of time wherein said second temperature is greater than said first temperature and said first period of time is longer than said second period of time.

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