Physical quantity sensor

• US 20090229370A1
• Filed: 04/02/2009
• Published: 09/17/2009
• Est. Priority Date: 06/13/2006
• Status: Active Grant

• Current Assignee: DENSO Corporation
• Original Assignee: DENSO Corporation
• Inventors: Kawasaki, Eishi, Fujii, Tetsuo
• Granted Patent: US 7,950,288 B2
• Time in Patent Office: Days
• US Class Current: 73/780
• CPC Class Codes: B81B 2201/0235 Accelerometers
• CPC Class Codes: B81B 2201/0264 Pressure sensors
• CPC Class Codes: B81B 2207/07 Interconnects
• CPC Class Codes: B81B 7/02 containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS] B81B7/04 takes precedence
• CPC Class Codes: B81C 2203/0118 Bonding a wafer on the substrate, i.e. where the cap consists of another wafer
• CPC Class Codes: G01L 9/0042 Constructional details associated with semiconductive diaphragm sensors, e.g. etching, or constructional details of non-semiconductive diaphragms details about the integration or bonding of piezoresistor in or on the diaphragm G01L9/0052 and G01L9/0057 respectively
• CPC Class Codes: G01P 1/023 for acceleration measuring devices
• CPC Class Codes: G01P 15/0802 Details
• CPC Class Codes: G01P 15/125 by capacitive pick-up
• CPC Class Codes: H01L 2224/05553 being rectangular
• CPC Class Codes: H01L 2224/05554 being square
• CPC Class Codes: H01L 2224/48091 Arched
• CPC Class Codes: H01L 2224/48137 the bodies being arranged next to each other, e.g. on a common substrate
• CPC Class Codes: H01L 2224/49175 Parallel arrangements
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/00014 the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
• CPC Class Codes: H01L 2924/1461 MEMS

Abstract

A physical quantity sensor for detecting a physical quantity includes: a first substrate having a first physical quantity detection element; a second substrate having a second physical quantity detection element, wherein the second substrate contacts the first substrate; and an accommodation space disposed between the first substrate and the second substrate. The first physical quantity detection element is disposed in the accommodation space. The first physical quantity detection element is protected with the first substrate and the second substrate since the first physical quantity detection element is sealed in the accommodation space.

Claims

1. A physical quantity sensor for detecting a physical quantity comprising:

a first substrate having a first principal surface and a first backside surface;

a first element arranged on the first principal surface of the first substrate;

a second substrate having a second principal surface and a second backside surface; and

a second element arranged on the second principal surface of the second substrate;

a first wiring layer and a second wiring layer,

wherein the first principal surface of the first substrate faces and contacts the second principal surface of the second substrate so that an accommodation space is provided between the first substrate and the second substrate,

wherein the second substrate includes a first through hole, which penetrates the second substrate from the second backside surface and reaches the first element on the first principal surface,

wherein the second substrate further includes a second through hole, which penetrates the second substrate from the second backside surface and reaches the second element on the second principal surface,

wherein the second substrate further includes a first through hole electrode and a second through hole electrode,

wherein the first through hole electrode is arranged in the first through hole via an insulation film, and the second through hole electrode is arranged in the second through hole via the insulation film, and

wherein the first wiring layer is electrically coupled with the first though hole electrode, and the second wiring layer is electrically coupled with the second through hole electrode.

2. The sensor according to claim 1,

wherein the first through hole electrode is electrically coupled with the first element,

wherein the first wiring layer is disposed on the second backside surface, and connects the first though hole electrode and the second through hole electrode, and

wherein the second wiring layer is disposed on the second principal surface, and connects the second through hole electrode and the second element.

3. The sensor according to claim 1,

wherein the first element is a sensor element having a movable portion, which is disposed in the accommodation space, and

wherein the second element provides a semiconductor integrated circuit for processing a signal from the sensor element or for controlling the sensor element.

4. The sensor according to claim 3,

wherein the first substrate is a SOI substrate having an embedded insulation film,

wherein the movable portion includes a movable electrode, which is movable in the accommodation space along with a direction parallel to the first principal surface of the first substrate in accordance with the physical quantity applied to the sensor,

wherein the sensor element further includes a fixed electrode, which faces the movable electrode,

wherein the movable electrode and the fixed electrode provide a capacitor therebetween, and

wherein the physical quantity is detected based on a capacitance of the capacitor.

5. The sensor according to claim 4,

wherein a part of the embedded insulation film is removed by a sacrifice layer etching so that the movable electrode is movable.

6. The sensor according to claim 1,

wherein the first and second through hole electrodes are made of metal or poly crystalline silicon.

7. A physical quantity sensor for detecting a physical quantity comprising:

a first substrate having a first principal surface and a first backside surface;

a first element arranged on the first principal surface of the first substrate;

a second substrate having a second principal surface and a second backside surface; and

a second element arranged on the second principal surface of the second substrate;

a first wiring layer,

wherein the first principal surface of the first substrate faces and contacts the second backside surface of the second substrate so that an accommodation space is provided between the first substrate and the second substrate,

wherein the second element on the second principal surface is opposite to the accommodation space,

wherein the second substrate includes a first through hole, which penetrates the second substrate from the second principal surface and reaches the first element on the first principal surface,

wherein the second substrate further includes a first through hole electrode, which is arranged in the first through hole via an insulation film, and

wherein the first wiring layer is electrically coupled with the first though hole electrode.

8. The sensor according to claim 7,

wherein the first through hole electrode is electrically coupled with the first element, and

wherein the first wiring layer is arranged on the second principal surface, and connects the second element and the first through hole electrode.

9. The sensor according to claim 7,

wherein the first element is a sensor element having a movable portion, which is disposed in the accommodation space, and

wherein the second element provides a semiconductor integrated circuit for processing a signal from the sensor element or for controlling the sensor element.

10. The sensor according to claim 9,

wherein the first substrate is a SOI substrate having an embedded insulation film,

wherein the movable portion includes a movable electrode, which is movable in the accommodation space along with a direction parallel to the first principal surface of the first substrate in accordance with the physical quantity applied to the sensor,

wherein the sensor element further includes a fixed electrode, which faces the movable electrode,

wherein the movable electrode and the fixed electrode provide a capacitor therebetween, and

wherein the physical quantity is detected based on a capacitance of the capacitor.

11. The sensor according to claim 10,

wherein a part of the embedded insulation film is removed by a sacrifice layer etching so that the movable electrode is movable.

12. The sensor according to claim 7,

wherein the first through hole electrode is made of metal or poly crystalline silicon.