Pixel Structure Having Shielded Storage Node
First Claim
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1. A pixel comprising:
- sample transistor coupled to a light detecting stage, the sample transistor comprising an inner junction region surrounding and coupled to a storage node, and a gate disposed around at least three sides of the inner junction region that operates as a charge barrier to shield the storage node; and
a memory capacitor coupled to the storage node.
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Abstract
A pixel structure having a shielded storage node. A pixel comprises a sample transistor coupled to a light detecting stage. The sample transistor comprises an inner junction region surrounding and coupled to a storage node and a gate disposed around at least three sides of the inner junction region that operates as a charge barrier to shield the storage node. A memory capacitor is coupled to the storage node.
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Citations
20 Claims
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1. A pixel comprising:
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sample transistor coupled to a light detecting stage, the sample transistor comprising an inner junction region surrounding and coupled to a storage node, and a gate disposed around at least three sides of the inner junction region that operates as a charge barrier to shield the storage node; and a memory capacitor coupled to the storage node. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11)
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- 12. A method comprising generating an active-pixel layout including a sample transistor having an inner junction region, an outer junction region disposed around the inner junction region, and a gate charge barrier disposed around at least three sides of the inner junction region that operates as a charge barrier to shield the inner junction region from charges generated in the outer junction region.
- 17. An apparatus comprising an active-pixel sensor including a sample transistor having a storage node, an outer junction region disposed closed ring around the storage node, and means for reducing a parasitic light sensitivity (PLS) of the pixel by shielding the storage node from charges generated in the outer junction region.
Specification