Semiconductor Device and Method for Manufacturing the Same
First Claim
1. A semiconductor device formed on a silicon-on-insulator structure including first and second silicon layers and a insulating layer buried between the first and the second silicon layers, comprising a capacitor including a first electrode formed in a doped region of the first silicon layer and a second electrode formed in a well region of the second silicon layer.
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Accused Products
Abstract
A semiconductor device may include a capacitor and a transistor on a silicon-on-insulator (SOI) substrate and a method for manufacturing the semiconductor device may include forming such a structure. A semiconductor device, formed on a silicon-on-insulator structure including first and second silicon layers and a insulating layer buried between the first and the second silicon layers, may include a capacitor including one electrode formed in a doped region of the first silicon layer and the other electrode formed in a well region of the second silicon layer.
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Citations
20 Claims
- 1. A semiconductor device formed on a silicon-on-insulator structure including first and second silicon layers and a insulating layer buried between the first and the second silicon layers, comprising a capacitor including a first electrode formed in a doped region of the first silicon layer and a second electrode formed in a well region of the second silicon layer.
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8. A method for manufacturing a semiconductor device, comprising:
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preparing a wafer having a silicon-on-insulator structure including first and second silicon layers and a insulating layer buried between the first and the second silicon layers, wherein the second silicon layer includes a well region as a first electrode of a capacitor; and performing ion-implantation to the first silicon layer to form a second electrode of the capacitor. - View Dependent Claims (9, 10, 11, 12, 13, 14)
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- 15. A semiconductor device formed on a substrate including a silicon-on-insulator structure, comprising a capacitor and a transistor wherein a first electrode of the capacitor is located at a same level with a source and a drain of the transistor and a second electrode of the capacitor is located at a lower level than the source and the drain of the transistor.
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19. A method for manufacturing a semiconductor device, comprising:
performing ion-implantation to active regions in a substrate including a silicon-on-insulator structure to thereby form a first electrode of a capacitor and a source and a drain of a transistor. - View Dependent Claims (20)
Specification