SEMICONDUCTOR DEVICE
First Claim
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1. A semiconductor device comprising:
- an active area comprising a source and a gate;
a gate metal contact deposited above and forming an electrical contact with the gate; and
a source metal contact deposited above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows.
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Abstract
A semiconductor device includes an active area having a source and a gate. A gate metal contact is deposited above and forms an electrical contact with the gate and a source metal contact is deposited above and forms an electrical contact with the source. The source metal contact includes a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows.
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Citations
20 Claims
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1. A semiconductor device comprising:
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an active area comprising a source and a gate; a gate metal contact deposited above and forming an electrical contact with the gate; and a source metal contact deposited above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9)
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10. A system comprising:
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a plurality of metal through contacts forming an electrical contact to an active area of a semiconductor device; and wherein the plurality of metal through contacts are positioned adjacent the active area, spaced at intervals from one another and arranged in two or more rows to provide a barrier against mobile ion contamination. - View Dependent Claims (11, 12)
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13. A semiconductor device comprising:
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an active area comprising a source and a gate; a gate metal contact arranged above and forming an electrical contact with the gate; a source metal contact arranged above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows, the metal through contacts of a first row being arranged offset with respect to an adjacent row.
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14. A method of making a semiconductor device comprising:
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providing an active area comprising a source and a gate; depositing a gate metal contact above and forming an electrical contact with the gate; and depositing a source metal contact above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows. - View Dependent Claims (15, 16, 17, 18, 19)
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20. A semiconductor device comprising:
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an active area comprising a source and a gate; a gate metal contact deposited above and forming an electrical contact with the gate; means for providing a source metal contact deposited above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows.
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Specification