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SEMICONDUCTOR DEVICE

  • US 20090230561A1
  • Filed: 03/12/2008
  • Published: 09/17/2009
  • Est. Priority Date: 03/12/2008
  • Status: Active Grant
First Claim
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1. A semiconductor device comprising:

  • an active area comprising a source and a gate;

    a gate metal contact deposited above and forming an electrical contact with the gate; and

    a source metal contact deposited above and forming an electrical contact with the source and comprising a plurality of metal through contacts positioned adjacent a side of the active area, the plurality of metal through contacts being spaced at intervals from one another and arranged in two or more rows.

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