Deposition Method and Manufacturing Method of Light-Emitting Device

• US 20090233006A1
• Filed: 03/12/2009
• Published: 09/17/2009
• Est. Priority Date: 03/17/2008
• Status: Active Grant

• Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Original Assignee: Semiconductor Energy Laboratory Co., Ltd.
• Inventors: Hamada, Takao, Tsurume, Takuya, Yamazaki, Shunpei, Aoyama, Tomoya
• Granted Patent: US 8,182,863 B2
• Time in Patent Office: Days
• US Class Current: 427/554
• CPC Class Codes: C23C 14/048 using irradiation by energy or particles
• CPC Class Codes: H10K 71/00 Manufacture or treatment specially adapted for the organic devices covered by this subclass
• CPC Class Codes: H10K 71/18 using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
• CPC Class Codes: H10K 71/40 Thermal treatment, e.g. annealing in the presence of a solvent vapour
• CPC Class Codes: H10K 71/60 Forming conductive regions or layers, e.g. electrodes
• CPC Class Codes: Y10T 428/12354 Nonplanar, uniform-thickness material having symmetrical channel shape or reverse fold [e.g., making acute angle, etc.]
• CPC Class Codes: Y10T 428/12361 having aperture or cut
• CPC Class Codes: Y10T 428/12806 Refractory [Group IVB, VB, or VIB] metal-base component
• CPC Class Codes: Y10T 428/24397 Carbohydrate

Abstract

A first substrate including, on one of surfaces, a light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the light absorption layer is provided; the surface of the first substrate on which the material layer is formed and a deposition target surface of a second substrate are disposed to face each other; and part of the material layer is deposited on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed from the other surface side of the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.

Claims

1. A deposition method comprising the steps of:

providing a first substrate having a first light absorption layer having metal nitride and a material layer which is formed so as to be in contact with the first light absorption layer on a first surface of the first substrate, and a second light absorption layer on a second surface opposite to the first surface of the first substrate;

making the first surface of the first substrate and a deposition target surface of a second substrate face to each other; and

depositing part of the material layer on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed in a direction from the second surface of the first substrate to the first surface of the first substrate through the first substrate to selectively heat part of the material layer which overlaps with the first light absorption layer.

2. The deposition method according to claim 1, wherein the first light absorption layer has a reflectance of less than or equal to 70% with respect to light.

3. The deposition method according to claim 1, wherein the film thickness of the first light absorption layer is greater than or equal to 10 nm and less than or equal to 600 nm.

4. The deposition method according to claim 1, wherein the metal nitride is any of titanium nitride, tantalum nitride, molybdenum nitride, tungsten nitride, or chromium nitride.

5. The deposition method according to claim 1, wherein a ratio of the content of nitrogen atoms in the first light absorption layer is greater than or equal to 0.1 and less than or equal to 1.3, when the number of metal atoms is considered to be 1.

6. The deposition method according to claim 1, wherein the first light absorption layer is formed in an island-like shape.

7. The deposition method according to claim 1, wherein the first light absorption layer is formed in a stripe shape.

8. The deposition method according to claim 1, wherein the material layer is formed by a wet method.

9. The deposition method according to claim 1, wherein the material layer includes an organic compound.

10. The deposition method according to claim 1, wherein the laser light is shaped into linear or rectangular light.

11. A method for manufacturing a light-emitting device using the deposition method according to claim 1, wherein part of the material layer is deposited over a first electrode which is formed on the deposition target surface of the second substrate.

12. The method for manufacturing a light-emitting device according to claim 11, wherein the material layer includes one of or both a light-emitting material and a carrier-transporting material.

13. A deposition method comprising the steps of:

providing a first substrate having a light absorption layer having chromium nitride and a material layer which is formed so as to be in contact with the light absorption layer on a first surface of the first substrate;

making the first surface of the first substrate and a deposition target surface of a second substrate face to each other; and

depositing part of the material layer on the deposition target surface of the second substrate in such a manner that irradiation with laser light having a repetition rate of greater than or equal to 10 MHz and a pulse width of greater than or equal to 100 fs and less than or equal to 10 ns is performed in a direction from a second surface opposite to the first surface of the first substrate to the first surface of the first substrate through the first substrate to selectively heat part of the material layer which overlaps with the light absorption layer.

14. The deposition method according to claim 13, wherein the light absorption layer has a reflectance of less than or equal to 70% with respect to light.

15. The deposition method according to claim 13, wherein the film thickness of the light absorption layer is greater than or equal to 10 nm and less than or equal to 600 nm.

16. The deposition method according to claim 13, wherein a ratio of the content of nitrogen atoms in the light absorption layer is greater than or equal to 0.1 and less than or equal to 1.3, when the number of metal atoms is considered to be 1.

17. The deposition method according to claim 13, wherein the light absorption layer is formed in an island-like shape.

18. The deposition method according to claim 13, wherein the light absorption layer is formed in a stripe shape.

19. The deposition method according to claim 13, wherein the material layer is formed by a wet method.

20. The deposition method according to claim 13, wherein the material layer includes an organic compound.

21. The deposition method according to claim 13, wherein the laser light is shaped into linear or rectangular light.

22. A method for manufacturing a light-emitting device using the deposition method according to claim 13, wherein part of the material layer is deposited over a first electrode which is formed on the deposition target surface of the second substrate.

23. The method for manufacturing a light-emitting device according to claim 22, wherein the material layer includes one of or both a light-emitting material and a carrier-transporting material.