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SCATTERING BAR OPC APPLICATION METHOD FOR SUB-HALF WAVELENGTH LITHOGRAPHY PATTERNING FIELD OF THE INVENTION

  • US 20090233186A1
  • Filed: 01/08/2009
  • Published: 09/17/2009
  • Est. Priority Date: 06/30/2003
  • Status: Active Grant
First Claim
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1. A method of forming a mask containing a target pattern comprising features to be imaged, said method comprising the steps of:

  • (a) obtaining said target pattern comprising features to be imaged;

    (b) expanding the width of said features to be imaged;

    (c) modifying said mask to include assist features, said assist features being placed adjacent edges of said features to be imaged, said assist features having a length corresponding to the expanded width of said features to. be imaged; and

    (d) reducing the features to be imaged from the expanded width to a width corresponding to the target pattern;

    wherein said mask includes said assist features and said features to be imaged, said features to be imaged having said width corresponding to said target pattern.

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