THIN FILM METAL OXYNITRIDE SEMICONDUCTORS
First Claim
1. A sputtering method, comprising:
- flowing an oxygen containing gas, and inert gas, and a nitrogen containing gas into a processing chamber;
applying an electrical bias to a sputtering target comprising one or more metals selected from the group consisting of gallium, cadmium, indium, and tin; and
depositing a semiconductor layer on the substrate, the semiconductor layer comprising the one or more metals, oxygen, and nitrogen.
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Abstract
The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped. The semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas. The sputtering target may optionally be doped. The semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon.
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Citations
25 Claims
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1. A sputtering method, comprising:
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flowing an oxygen containing gas, and inert gas, and a nitrogen containing gas into a processing chamber; applying an electrical bias to a sputtering target comprising one or more metals selected from the group consisting of gallium, cadmium, indium, and tin; and depositing a semiconductor layer on the substrate, the semiconductor layer comprising the one or more metals, oxygen, and nitrogen. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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- 9. A semiconductor material, comprising nitrogen, oxygen, and one or more elements selected from the group consisting of gallium, cadmium, indium, and tin.
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15. A semiconductor layer deposition method, comprising:
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introducing an oxygen containing precursor, a nitrogen containing precursor, and at least one precursor selected from the group consisting of a gallium precursor, a cadmium precursor, a tin precursor, and an indium precursor to a processing chamber; and depositing a semiconductor layer on a substrate disposed in the processing chamber, the semiconductor layer comprising oxygen, nitrogen, and at least one element selected from the group consisting of gallium, cadmium, tin, and indium. - View Dependent Claims (16, 17, 18, 19, 20)
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- 21. A semiconductor material, comprising oxygen, nitrogen, and one or more elements having a filled s orbital and a filled d orbital.
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24. A semiconductor layer deposition method, comprising:
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flowing an oxygen containing gas and a nitrogen containing gas into a processing chamber; applying an electrical bias to a sputtering target comprising one or more elements having a filled s orbital and a filled d orbital; and depositing a semiconductor layer on the substrate, the semiconductor layer comprising the one or more elements, oxygen, and nitrogen. - View Dependent Claims (25)
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Specification