PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
First Claim
1. A plasma processing apparatus in which glow discharge plasma is generated in a reaction chamber and a reaction product is deposited over a substrate disposed in the reaction chamber, comprising:
- an electrode generating the glow discharge plasma in the reaction chamber;
a first high-frequency cut filter and a second high-frequency cut filter which are electrically connected to the electrode;
a first matching box electrically connected to the first high-frequency cut filter;
a first high-frequency power source electrically connected to the first matching box;
a second matching box electrically connected to the second high-frequency cut filter; and
a second high-frequency power source electrically connected to the second matching box,wherein a radio wave of a high-frequency wave output from the first high-frequency power source has a wavelength of greater than or equal to 10 m;
wherein a radio wave of a high-frequency wave output from the second high-frequency power source has a wavelength of less than 10 m;
wherein the first high-frequency cut filter is arranged to block the high-frequency power from the second high-frequency power source; and
wherein the second high-frequency cut filter is arranged to block the high-frequency power from the first high-frequency power source.
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Accused Products
Abstract
By an evacuation unit including first and second turbo molecular pumps connected in series, the ultimate pressure in a reaction chamber is reduced to ultra-high vacuum. By a knife-edge-type metal-seal flange, the amount of leakage in the reaction chamber is reduced. A microcrystalline semiconductor film and an amorphous semiconductor film are stacked in the same reaction chamber where the pressure is reduced to ultra-high vacuum. By forming the amorphous semiconductor film covering the surface of the microcrystalline semiconductor film, oxidation of the microcrystalline semiconductor film is prevented.
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Citations
7 Claims
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1. A plasma processing apparatus in which glow discharge plasma is generated in a reaction chamber and a reaction product is deposited over a substrate disposed in the reaction chamber, comprising:
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an electrode generating the glow discharge plasma in the reaction chamber; a first high-frequency cut filter and a second high-frequency cut filter which are electrically connected to the electrode; a first matching box electrically connected to the first high-frequency cut filter; a first high-frequency power source electrically connected to the first matching box; a second matching box electrically connected to the second high-frequency cut filter; and a second high-frequency power source electrically connected to the second matching box, wherein a radio wave of a high-frequency wave output from the first high-frequency power source has a wavelength of greater than or equal to 10 m; wherein a radio wave of a high-frequency wave output from the second high-frequency power source has a wavelength of less than 10 m; wherein the first high-frequency cut filter is arranged to block the high-frequency power from the second high-frequency power source; and wherein the second high-frequency cut filter is arranged to block the high-frequency power from the first high-frequency power source. - View Dependent Claims (2, 3, 4)
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5. A method for manufacturing a semiconductor device, comprising the steps of:
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introducing a first reaction gas into a reaction chamber; applying a high-frequency power with a frequency of greater than or equal to 30 MHz and less than or equal to 300 MHz to an upper electrode of the reaction chamber to generate glow discharge plasma; depositing a microcrystalline semiconductor film over a substrate disposed over a lower electrode of the reaction chamber; introducing a second reaction gas into the reaction chamber; applying a high-frequency power with a frequency of greater than or equal to 30 MHz and less than or equal to 300 MHz to the upper electrode to generate glow discharge plasma; and stacking an amorphous semiconductor film over the microcrystalline semiconductor film.
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6. A method for manufacturing a semiconductor device, comprising the steps of:
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introducing a reaction gas into a reaction chamber; applying a first high-frequency power with a first frequency of greater than or equal to 3 MHz and less than 30 MHz and a second high-frequency power with a second frequency of greater than or equal to 30 MHz and less than or equal to 300 MHz, which are superposed on each other, to an upper electrode of the reaction chamber to generate glow discharge plasma; depositing a microcrystalline semiconductor film over a substrate disposed over a lower electrode of the reaction chamber; introducing hydrogen into the reaction chamber after depositing the microcrystalline semiconductor film; and applying a third high-frequency power with a third frequency of greater than or equal to 30 MHz and less than or equal to 300 MHz to the upper electrode to perform plasma treatment on the microcrystalline semiconductor film. - View Dependent Claims (7)
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Specification