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PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

  • US 20090233425A1
  • Filed: 03/10/2009
  • Published: 09/17/2009
  • Est. Priority Date: 03/17/2008
  • Status: Active Grant
First Claim
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1. A plasma processing apparatus in which glow discharge plasma is generated in a reaction chamber and a reaction product is deposited over a substrate disposed in the reaction chamber, comprising:

  • an electrode generating the glow discharge plasma in the reaction chamber;

    a first high-frequency cut filter and a second high-frequency cut filter which are electrically connected to the electrode;

    a first matching box electrically connected to the first high-frequency cut filter;

    a first high-frequency power source electrically connected to the first matching box;

    a second matching box electrically connected to the second high-frequency cut filter; and

    a second high-frequency power source electrically connected to the second matching box,wherein a radio wave of a high-frequency wave output from the first high-frequency power source has a wavelength of greater than or equal to 10 m;

    wherein a radio wave of a high-frequency wave output from the second high-frequency power source has a wavelength of less than 10 m;

    wherein the first high-frequency cut filter is arranged to block the high-frequency power from the second high-frequency power source; and

    wherein the second high-frequency cut filter is arranged to block the high-frequency power from the first high-frequency power source.

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