Chemical Treatments to Enhance Photovoltaic Performance of CIGS
First Claim
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1. A method of treating a CIGS material, comprising(a) contacting the CIGS material with an ionic solvent comprising S- or Se-containing compounds;
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Abstract
The present invention provides method of treating semiconductor surfaces (e.g., CIGS) using various solvents (including ionic solvents and eutectics), and methods preparing photovoltaic cells comprising treated CIGS materials.
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Citations
36 Claims
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1. A method of treating a CIGS material, comprising
(a) contacting the CIGS material with an ionic solvent comprising S- or Se-containing compounds; - and
(b) heating the CIGS material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 16)
- and
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9. A method of treating a CIGS material, comprising
(a) contacting the CIGS material with a eutectic solvent that comprises thiourea and choline chloride at a 2: - 1 molar ratio (thiourea;
choline chloride); and(b) heating the CIGS material. - View Dependent Claims (10, 11, 12, 13, 14, 15, 17)
- 1 molar ratio (thiourea;
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18. A method of preparing a CIGS solar cell, comprising:
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(a) providing a CIGS film deposited on an electrically conducting substrate; (b) contacting the CIGS material with a solvent comprising S- or Se-containing compounds; (c) heating the CIGS material; (d) preparing the CIGS material for inclusion in a solar cell; and (e) disposing a front contact on the CIGS material to form the solar cell. - View Dependent Claims (19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34, 35, 36)
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Specification