Sustrate and Semiconductor Light-Emitting Device

• US 20090236629A1
• Filed: 07/05/2006
• Published: 09/24/2009
• Est. Priority Date: 07/08/2005
• Status: Abandoned Application

• Current Assignee: Sumitomo Chemical Company Limited
• Original Assignee: Sumitomo Chemical Company Limited
• Inventors: Kasahara, Kenji, Nishikawa, Naohiro, Tsuchida, Yoshihiko, Ueda, Kazumasa
• Application Number:
  US11/922,497
• Publication Number:
  US 20090236629A1
• Time in Patent Office: Days
• US Class Current: 257/103
• CPC Class Codes: H01L 21/3065 Plasma etching; Reactive-ion etching
• CPC Class Codes: H01L 33/007 comprising nitride compounds
• CPC Class Codes: H01L 33/22 Roughened surfaces, e.g. at the interface between epitaxial layers

Abstract

The present invention provides a substrate and a semiconductor light emitting device. Convexes having a curved surface are formed on the substrate. The semiconductor light emitting device comprises a substrate on which convexes having a curved surface are formed and a semiconductor layer on the substrate.

Claims

1. A substrate on which convexes having a curved surface are formed.

2. The substrate according to claim 1, wherein the convexes and the substrate are made of the same material.

3. The substrate according to claim 1, wherein the substrate is made of sapphire, sapphire, SiC, Si, MgAl₂O₄, LiTaO₃, ZrB₂ or CrB₂.

4. A method for producing a substrate comprising the steps of (1) and (2):

(1) placing inorganic particles on a substrate, and

(2) dry-etching the substrate and the inorganic particles to form convexes.

5. The method according to claim 4, wherein the substrate is made of sapphire, sapphire, SiC, Si, MgAl₂O₄, LiTaO₃, ZrB₂ or CrB₂.

6. The method according to claim 4, wherein the inorganic particles are made of at least one selected from the group consisting of oxide, nitride, carbide, boride, sulfide, selenide and metal.

7. The method according to claim 6, wherein the inorganic particles are made of oxide.

8. The method according to claim 7, wherein the oxide is made of silica.

9. The method according to claim 4, wherein the inorganic particles are in the shape of sphere, multi-sided pyramid, rectangular parallelepiped or needle.

10. A semiconductor light emitting device comprising a substrate on which convexes having a curved surface are formed and a semiconductor layer on the substrate.

11. The semiconductor light emitting device according to claim 10, wherein the substrate is made of sapphire, sapphire, SiC, Si, MgAl₂O₄, LiTaO₃, ZrB₂ or CrB₂.

12. The semiconductor light emitting device according to claim 10, wherein the semiconductor layer is made of group 3-5 nitride semiconductor compound.

13. A method for producing a semiconductor light emitting device comprising the steps of (1) to (3):

(1) placing inorganic particles on a substrate,

(2) dry-etching the substrate and the inorganic particles to form convexes, and

(3) growing a semiconductor layer on the substrate.

14. The method according to claim 13, comprising the step of (4) between step (2) and step (3):

(4) removing the inorganic particles from the substrate.

15. The method according to claim 13, wherein the substrate is made of sapphire, sapphire, SiC, Si, MgAl₂O₄, LiTaO₃, ZrB₂ or CrB₂.

16. The method according to claim 13, wherein the inorganic particles are made of at least one selected from the group consisting of oxide, nitride, carbide, boride, sulfide, selenide and metal.

17. The method according to claim 13, wherein the semiconductor layer is made of group 3-5 nitride semiconductor compound.