Semiconductor Device and a Manufacturing Process Thereof
First Claim
1. A semiconductor device, comprising:
- a plurality of drain metal blocks;
a plurality of source metal blocks, each disposed between two of the drain metal blocks;
a plurality of polysilicon strips, wherein at least two of the polysilicon strips correspondingly disposed across one of the drain metal blocks and one of the source metal blocks;
a first source metal strip, electrically connected to some of the source metal blocks, in the absence of the polysilicon strips;
a first drain metal strip, electrically connected to some of the drain metal blocks, in the absence of the polysilicon strips;
a plurality of first conductive wires, coupled to the polysilicon strips, wherein the first conductive wires forms a plurality of grids;
a second drain metal strip electrically connected to the drain metal blocks which are not directly connected to the first drain metal strip, for receiving a drain voltage, wherein the second drain metal strip is a straight strip; and
a third drain metal strip electrically connected to the first drain metal strip and the second drain metal strip, for delivering the drain voltage to the first drain metal strip.
1 Assignment
0 Petitions
Accused Products
Abstract
A semiconductor device has a plurality of drain metal blocks, a plurality of source metal blocks, a plurality of polysilicon strips, a first source metal strip, a first drain metal strip, and a plurality of first conductive wires. Each of the source metal blocks is disposed between two of the drain metal blocks, and at least two of the polysilicon strips are correspondingly disposed across one of the drain metal blocks and one of the source metal blocks. The first source metal strip, in the absence of the polysilicon strips, is electrically connected to some of the source metal blocks. The first drain metal strip, in the absence of the polysilicon strips, is electrically connected to some of the drain metal blocks. The first conductive wires, coupled to the polysilicon strips, form a plurality of grids.
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Citations
13 Claims
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1. A semiconductor device, comprising:
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a plurality of drain metal blocks; a plurality of source metal blocks, each disposed between two of the drain metal blocks; a plurality of polysilicon strips, wherein at least two of the polysilicon strips correspondingly disposed across one of the drain metal blocks and one of the source metal blocks; a first source metal strip, electrically connected to some of the source metal blocks, in the absence of the polysilicon strips; a first drain metal strip, electrically connected to some of the drain metal blocks, in the absence of the polysilicon strips; a plurality of first conductive wires, coupled to the polysilicon strips, wherein the first conductive wires forms a plurality of grids; a second drain metal strip electrically connected to the drain metal blocks which are not directly connected to the first drain metal strip, for receiving a drain voltage, wherein the second drain metal strip is a straight strip; and a third drain metal strip electrically connected to the first drain metal strip and the second drain metal strip, for delivering the drain voltage to the first drain metal strip. - View Dependent Claims (2, 3, 4, 6, 7, 8, 9, 10, 11, 12)
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5. (canceled)
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13-16. -16. (canceled)
Specification
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- Resources
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Current AssigneeHimax Analogic, Inc. (Himax Technologies Incorporated)
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Original AssigneeHimax Analogic, Inc. (Himax Technologies Incorporated)
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InventorsHsueh, Kuan-Po
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Application NumberUS12/052,797Publication NumberTime in Patent OfficeDaysField of SearchUS Class Current257/382CPC Class CodesH01L 27/0211 adapted for requirements of...H03K 2217/0036 Means reducing energy consu...
