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N-ary Three-Dimensional Mask-Programmable Read-Only Memory

  • US 20090237976A1
  • Filed: 06/04/2009
  • Published: 09/24/2009
  • Est. Priority Date: 07/15/2005
  • Status: Active Grant
First Claim
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1. An N-ary three-dimensional mask-programmable read-only memory (N-3DMPROM), comprising:

  • a semiconductor substrate including transistors;

    a plurality of vertically stacked mask-programmable memory levels, said memory levels stacked above and coupled to said substrate, each of said memory level comprising a plurality of address-selection lines and mask-programmable memory cells, each of said memory cells comprising a diode-like device and having one of at least N possible states with N>

    2, wherein memory cells in different states have different ranges of read current at a read voltage;

    wherein said substrate further comprises means for converting data from said memory levels into binary.

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