Bifacial Cell With Extruded Gridline Metallization

• US 20090239332A1
• Filed: 06/01/2009
• Published: 09/24/2009
• Est. Priority Date: 11/17/2005
• Status: Active Grant

• Current Assignee: SolarWorld Industries GmbH
• Original Assignee: Palo Alto Research Center, Inc. (Xerox Holdings Corp.)
• Inventors: Fork, David K., Shea, Stephen Patrick
• Granted Patent: US 8,399,283 B2
• Time in Patent Office: Days
• US Class Current: 438/98
• CPC Class Codes: H01L 31/022425 for solar cells
• CPC Class Codes: H01L 31/02363 of the semiconductor body itself, e.g. textured active layers
• CPC Class Codes: H01L 31/048 Encapsulation of modules
• CPC Class Codes: H01L 31/056 the light-reflecting means being of the back surface reflector [BSR] type
• CPC Class Codes: H01L 31/0684 double emitter cells, e.g. bifacial solar cells
• CPC Class Codes: H01L 31/18 Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
• CPC Class Codes: H01L 31/1876 Particular processes or apparatus for batch treatment of the devices
• CPC Class Codes: Y02E 10/52 PV systems with concentrators
• CPC Class Codes: Y02E 10/547 Monocrystalline silicon PV cells
• CPC Class Codes: Y02P 70/50 Manufacturing or production processes characterised by the final manufactured product

Abstract

Provided is a bifacial photovoltaic arrangement comprising a bifacial cell which included a semiconductor layer having a first surface and a second surface, a first passivation layer formed on the first surface of the semiconductor layer and a second passivation layer formed on the second surface of the semiconductor layer, and a plurality of metallizations formed on the first and second passivation layers and selectively connected to the semiconductor layer. At least some of the metallizations on the bifacial photovoltaic arrangement comprising an elongated metal structure having a relatively small width and a relatively large height extending upward from the first and second passivation layers.

Claims

2-1. The method according to claim 1, wherein utilizing the direct-write metallization apparatus comprises utilizing an inkjet-type printhead.

14. A method for producing a bifacial photovoltaic device, the photovoltaic device including a semiconductor layer having one or more doped regions, and opposing first and second surfaces, the method comprising:

forming a first blanket passivation layer on the first surface and a second blanket passivation layer on the second surface;

utilizing a direct-write metallization apparatus to form a plurality of first conductive lines that extend over the first blanket passivation layer and electrically contact associated doped regions of the one or more doped regions through the first surface; and

utilizing the direct-write metallization apparatus to form a plurality of second conductive lines that extend over the second blanket passivation layer and electrically contact associated doped regions of the one or more doped regions through the second surface.

15. The method of claim 14, further comprising utilizing a non-contact patterning apparatus to define a plurality of first openings through the first passivation layer to the first surface and a plurality of second openings through the second passivation layer to the second surface, each the first and second openings exposing a corresponding one of the one or more doped regions of the semiconductor layer.

16. The method of claim 15, wherein utilizing the direct-write metallization apparatus to form the plurality of first conductive lines comprises:

utilizing the direct-write metallization apparatus to deposit a plurality of first contact portions into the plurality of first openings such that each said first contact portion contacts the first surface; and

utilizing the direct-write metallization apparatus to deposit the plurality of first conductive lines such that each said first conductive line contacts a corresponding group of said plurality of contact portions, whereby said each first conductive line is electrically connected to said corresponding one of the one or more doped regions by way of said corresponding group of said plurality of contact portions.

17. The method of claim 16, wherein utilizing the direct-write metallization apparatus to form the plurality of second conductive lines comprises:

utilizing the direct-write metallization apparatus to deposit a plurality of second contact portions into the plurality of second openings such that each said second contact portion contacts the second surface; and

utilizing the direct-write metallization apparatus to deposit the plurality of second conductive lines such that each said second conductive line contacts a corresponding group of said plurality of second contact portions, whereby said each second conductive line is electrically connected to said corresponding one of the one or more doped regions by way of said corresponding group of said plurality of second contact portions.

18. The method of claim 17,

wherein utilizing the direct-write metallization apparatus deposit the plurality of second contact portions comprises depositing a first silicide-forming metal in said plurality of first openings, and

wherein utilizing the direct-write metallization apparatus deposit the plurality of second contact portions comprises depositing a second silicide-forming metal in said plurality of second openings, wherein the first silicide-forming metal differs from the second silicide-forming metal.

19. The method of claim 17, wherein utilizing the direct-write metallization apparatus to deposit the plurality of first and second conductive lines further comprises matching a first mechanical moment of the first conductive lines with a second mechanical moment of the second conductive lines.

20. A method for producing a bifacial photovoltaic device, the photovoltaic device including a semiconductor layer having opposing first and second surfaces, the method comprising:

forming a first blanket passivation layer on the first surface and a second blanket passivation layer on the second surface;

utilizing a non-contact patterning apparatus to define a plurality of first openings through the first passivation layer to the first surface and a plurality of second openings through the second passivation layer to the second surface;

utilizing a direct-write metallization apparatus to deposit a plurality of first contact portions into the plurality of first openings and a plurality of second contact portions into the plurality of second openings; and

utilizing the direct-write metallization apparatus to deposit a plurality of first conductive lines such that each said first conductive line contacts a corresponding group of said plurality of first contact portions, and to deposit a plurality of second conductive lines such that each said second conductive line contacts a corresponding group of said plurality of second contact portions.