Semiconductor Device and Manufacturing Method Thereof
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Abstract
An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.
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Citations
58 Claims
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1-38. -38. (canceled)
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39. A method of manufacturing a semiconductor device comprising:
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forming an oxide semiconductor film over a substrate; and etching the oxide semiconductor film by using a gas containing at least one of fluorine and chlorine to form a channel region of a thin film transistor. - View Dependent Claims (40, 41, 42, 43)
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44. A method of manufacturing a semiconductor device comprising:
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forming an oxide semiconductor film over a substrate; and forming the oxide semiconductor film into an island-shaped region by dry etching using a gas containing at least one of fluorine and chlorine. - View Dependent Claims (45, 46, 47, 48)
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49. A method of manufacturing a semiconductor device comprising:
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forming an oxide semiconductor film over a substrate; and etching the oxide semiconductor film by using a gas containing Cl2 to form into a desired shape. - View Dependent Claims (50, 51, 52)
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53. A method of manufacturing a semiconductor device comprising:
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forming an oxide semiconductor film over a substrate; forming a mask of a resist over the oxide semiconductor film; and selectively etching the oxide semiconductor film by using the mask and a gas containing at least one of fluorine and chlorine. - View Dependent Claims (54, 55, 56, 57, 58)
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Specification