AlGaN SUBSTRATE AND PRODUCTION METHOD THEREOF

• US 20090239357A1
• Filed: 05/04/2009
• Published: 09/24/2009
• Est. Priority Date: 03/28/2005
• Status: Active Grant

• Current Assignee: Toyoda Gosei Company Limited (Toyota Motor Corporation)
• Original Assignee: Showa Denko KK (Resonac Holdings Corp.)
• Inventors: Bando, Akira, Amano, Hiroshi
• Granted Patent: US 8,882,910 B2
• Time in Patent Office: Days
• US Class Current: 438/478
• CPC Class Codes: C03B 25/02 in a discontinuous way
• CPC Class Codes: C30B 25/02 Epitaxial-layer growth
• CPC Class Codes: C30B 29/403 AIII-nitrides
• CPC Class Codes: H01L 21/0237 Materials
• CPC Class Codes: H01L 21/0242 Crystalline insulating materials
• CPC Class Codes: H01L 21/0254 Nitrides
• CPC Class Codes: H01L 21/0262 Reduction or decomposition of gaseous compounds, e.g. CVD
• CPC Class Codes: H01L 33/0075 comprising nitride compounds
• CPC Class Codes: Y10S 117/915 Separating from substrate

Abstract

A substrate is formed of Al_xGa_1-xN, wherein 0≦x≦1. The substrate is a single crystal and is used producing a Group III nitride semiconductor device. A method for producing a substrate of Al_xGa_1-xN, wherein 0<x≦1, includes the steps of forming a layer of Al_xGa_1-xN, wherein 0<x≦1, on a base material and removing the base material. The method adopts the MOCVD method using a raw material molar ratio of a Group V element to Group III element that is 1000 or less, a temperature of 1200° C. or more for forming the layer of Al_xGa_1-xN, wherein 0<x≦1. The base material is formed of one member selected from the group consisting of sapphire, SiC, Si, ZnO and Ga₂O₃. The substrate is used for fabricating a Group III nitride semiconductor device.

Claims

1. (canceled)

2. (canceled)

3. (canceled)

4. A method for producing a substrate of Al_xGa_1-xN, wherein 0<

x≦

1, comprising the steps of forming a layer of Al_xGa_1-xN, wherein 0<

x≦

1, on a base material and removing the base material.

5. A method according to claim 4, wherein the step of forming a layer of Al_xGa_1-xN, wherein 0<

x≦

1, is performed by the MOCVD method.

6. A method according to claim 5 wherein the MOCVD method adopts a speed of growth of 5 μ

m/hour for forming the layer of Al_xGa_1-xN, wherein 0<

x≦

1.

7. A method according to claim 5, wherein the MOCVD method adopts a raw material molar ratio of a Group V element to Group III element that is 1000 or less for forming the layer of Al_xGa_1-xN, wherein 0<

x≦

1.

8. A method according to claim 5, wherein the MOCVD method adopts a temperature of 1200°

C. or more for forming the layer of Al_xGa_1-xN, wherein 0<

x≦

1.

9. A method according to claim 7, wherein the MOCVD method adopts a temperature of 1200°

C. or more for forming the layer of Al_xGa_1-xN, wherein 0<

x≦

1.

10. A method according to claim 4, wherein the base material is formed of one member selected from the group consisting of sapphire, SiC, Si, ZnO and Ga₂O₃.

11. (canceled)

12. (canceled)