PRODUCING METHOD OF SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS
First Claim
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1. A producing method of a semiconductor device, comprising:
- loading a substrate into a reaction furnace;
forming a film on the substrate in the reaction furnace;
unloading the substrate from the reaction furnace after the film has been formed; and
forcibly cooling an interior of the reaction furnace, by a forcibly cooling device disposed outside the reaction furnace covering the reaction furnace, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.
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Abstract
Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.
453 Citations
14 Claims
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1. A producing method of a semiconductor device, comprising:
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loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace, by a forcibly cooling device disposed outside the reaction furnace covering the reaction furnace, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8)
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9. A producing method of a semiconductor device, comprising:
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loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and making gas flow in the reaction furnace thereby performing purging in the reaction furnace, while making cooling medium flow outside the reaction furnace thereby forcibly cooling the interior of the reaction furnace, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.
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10. A producing method of a semiconductor device, comprising:
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loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; performing purging in the reaction furnace, while making cooling medium flow outside the reaction furnace by a forcibly cooling device disposed outside the of the reaction furnace, in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded; and cleaning the interior of the reaction furnace after repeating the substrate loading, the film forming, the substrate unloading and the purging in the reaction furnace. - View Dependent Claims (11)
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12. A substrate processing apparatus, comprising:
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a reaction furnace which forms a film on a substrate; a film-forming gas supply line which supplies film-forming gas into the reaction furnace; a purge gas supply line which supplies purge gas into the reaction furnace; an exhaust line which exhausts the reaction furnace; a transfer device which loads and unloads the substrate to and from the reaction furnace; a forcibly cooling device which forcibly cools an interior of the reaction furnace and which is disposed outside the reaction furnace covering the reaction furnace, and a controller which controls the forcibly cooling device such that the forcibly cooling device forcibly cools the interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded from the reaction furnace. - View Dependent Claims (13, 14)
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Specification