VOLTAGE SWITCHABLE DIELECTRIC MATERIALS WITH LOW BAND GAP POLYMER BINDER OR COMPOSITE

• US 20090242855A1
• Filed: 03/19/2009
• Published: 10/01/2009
• Est. Priority Date: 11/21/2006
• Status: Abandoned Application

• Current Assignee: Junjun Wu, Lex Kosowsky, Ning Shi, Robert Fleming
• Original Assignee: Junjun Wu, Lex Kosowsky, Ning Shi, Robert Fleming
• Inventors: Wu, Junjun, Kosowsky, Lex, Fleming, Robert, Shi, Ning
• Application Number:
  US12/407,346
• Publication Number:
  US 20090242855A1
• Time in Patent Office: Days
• US Class Current: 252/519.340
• CPC Class Codes: H01B 1/22 the conductive material comprising metals or alloys
• CPC Class Codes: H01L 23/60 Protection against electrostatic charges or discharges, e.g. Faraday shields
• CPC Class Codes: H01L 27/0248 for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
• CPC Class Codes: H01L 27/101 including resistors or capacitors only
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01L 2924/12044 OLED

Abstract

A composition is provided that includes a polymer binder, and one or more classes of particle constituents. At least one class of particle constituents includes semiconductive particles that individually have a band gap that is no greater than 2 eV. As VSD material, the composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of said voltage that exceeds the characteristic voltage level.

Claims

1. A composition of voltage switchable dielectric material comprising a polymer binder comprising a mixture of two or more types of polymers or copolymers, wherein an effective band gap of the polymer binder is less than 2 eV.

2. The composition of claim 1, wherein at least one type of polymer in the polymer binder has a band gap that is sufficiently low to enable the effective band gap of the polymer binder to be less than 2 eV.

3. The composition of claim 1, wherein at least another type of polymer in the polymer binder is epoxy.

4. A composition comprising:

a polymer binder that has an effective band gap of less than 2 eV;

one or more classes of particle constituents, including a class of semiconductive particles that individually have a band gap that is less than 2 eV;

wherein said composition is (i) dielectric in absence of a voltage that exceeds a characteristic voltage level, and (ii) conductive with application of said voltage that exceeds the characteristic voltage level.

5. The composition of claim 4, wherein the semiconductive particles are micron or nanometer in dimension.

6. The composition of claim 4, wherein the band gap of the individual semiconductive particles is substantially equal to or less than the band gap of the polymer binder.

7. The composition of claim 4, wherein the one or more classes of particle constituents include conductive particles.

8. The composition of claim 4, wherein the one or more classes of particle constituents include high aspect ratio particles other than the class of semiconductive particles with the band gap of less than 2 eV.

9. The composition of claim 4, wherein the semiconductive particles include or correspond to compound semiconductors of a class III-V, II-VI, III-VI, and I-III-VI.

10. The composition of claim 9, wherein the compound semiconductors are high aspect ratio particles.

11. The composition of claim 9, wherein the compound semiconductor includes at least some concentration of Quantum Dot particles.

12. The composition of claim 9, wherein the semiconductor includes at least some concentration of nano-sized crystalline silicon.

13. The composition of claim 4, wherein the polymer corresponds to epoxy or acrylate.

14. The composition of claim 4, wherein the polymer binder includes a blend of polymers that includes at least one polymer with band gap that is sufficiently low to enable the effective band gap of the blend to be less than 2 eV.

15. A device comprising:

a protective layer of voltage switchable dielectric (VSD) material comprising;

a polymer binder;

a concentration of semiconductive particles dispersed in the polymer that individually have a band gap that is substantially equal to or less than a band gap of the polymer binder.

16. The device of claim 15, wherein the concentration of semiconductive particles are micron or nanometer in dimension.

17. The device of claim 16, wherein the VSD material further comprises, in addition to the concentration of semiconductive particles, a concentration of one or more classes of particles corresponding to conductive particles, higher band gap semiconductive particles, or high aspect ratio particles.

18. The device of claim 15, wherein the semiconductive particles with the band gap of less than 2 eV include or correspond to compound semiconductors of a class III-V, II-VI, III-VI, and I-III-VI.

19. The device of claim 15, wherein the semiconductor particles with the band gap of less than 2 eV includes at least some concentration of Quantum Dot particles.

20. The device of claim 15, wherein the semiconductor particles with the band gap of less than 2 eV includes at least some concentration of nanometer dimensioned crystalline silicon.