Semiconductor device, production method thereof, and display device
1 Assignment
0 Petitions
Accused Products
Abstract
The present invention provides a semiconductor device which can be produced by simple and cheap processes and effectively achieve improved performances and a reduced electric power consumption. Further, the present invention provides a production method thereof and a display device including the semiconductor device or a semiconductor device produced by the production method. The present invention is a semiconductor device including a pixel part and an integrated circuit part on a substrate, the pixel part including a switching element having a gate electrode formed on a semiconductor thin film, the integrated circuit part including a semiconductor layer on a gate electrode, wherein a passivation film is formed on the gate electrode in the pixel part.
211 Citations
46 Claims
-
1-14. -14. (canceled)
-
15. A semiconductor device comprising a first thin film element and a second thin film element on an insulating substrate,
the first thin film element including a metal electrode or a metal wiring on a first semiconductor thin film with an insulating film therebetween, the second thin film element including a second semiconductor layer, wherein a passivation film is formed in the first thin film element, and the passivation film is arranged only in a pixel part.
-
21. A production method of a semiconductor device including a first thin film element and a second thin film element on a substrate with an insulating surface,
the first thin film element including a metal electrode or a metal wiring on a first semiconductor thin film with an insulating film therebetween, the second thin film element including a second semiconductor layer, the method comprising the steps of: -
exposing the substrate with an insulating surface in a region to which the second thin film element is transferred; transferring a part of a semiconductor wafer to the substrate, thereby forming the second thin film element; forming a passivation film in the first thin film element; and thinning the second semiconductor layer in the second thin film element. - View Dependent Claims (22, 23, 24, 25, 26, 29, 30, 36)
-
-
31. A semiconductor device comprising a pixel part and an integrated circuit part on a substrate,
the pixel part including a switching element having a gate electrode formed on a semiconductor thin film with a gate insulating film therebetween, the integrated circuit part including a semiconductor layer on a gate electrode with a gate oxide film therebetween, wherein a passivation film is formed on the gate electrode in the pixel part, and the passivation film is formed only in the pixel part.
-
37. A production method of a semiconductor device including a pixel part and an integrated circuit part on a substrate,
the pixel part including a switching element having a gate electrode formed on a semiconductor thin film with a gate insulating film therebetween, the integrated circuit part including a semiconductor layer, the method comprising the steps of: -
exposing the substrate in a region to which the integrated circuit part is transferred; transferring a part of a semiconductor wafer to the substrate, thereby forming the integrated circuit part; forming a passivation film on the gate electrode in the pixel part; and thinning a semiconductor layer in the integrated circuit part. - View Dependent Claims (38, 39, 40, 41, 42, 45, 46)
-
Specification