SILICON BASED LIGHT EMITTING DIODE
First Claim
1. A silicon-based light emitting diode (LED), comprising:
- a substrate having a p-type mesa substrate structure;
an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface;
a first reflective layer facing the first surface of the active layer;
a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer;
an n-type doping layer sandwiched between the active layer and the first reflective layer;
a first electrode electrically connected to the n-type doping layer; and
a second electrode electrically connected to the p-type substrate structure.
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Accused Products
Abstract
Provided is a highly efficient silicon-based light emitting diode (LED) including a Distributed Bragg Reflector (DBR), an n-type doping layer, and a p-type substrate structure. The silicon-based LED includes: a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure.
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Citations
16 Claims
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1. A silicon-based light emitting diode (LED), comprising:
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a substrate having a p-type mesa substrate structure; an active layer that is formed on the substrate and has a first surface and a second surface opposite the first surface; a first reflective layer facing the first surface of the active layer; a second reflective layer that is located on either side of the p-type substrate structure and faces the second surface of the active layer; an n-type doping layer sandwiched between the active layer and the first reflective layer; a first electrode electrically connected to the n-type doping layer; and a second electrode electrically connected to the p-type substrate structure. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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Specification