MONOLITHICALLY INTEGRATED PHOTODETECTORS
First Claim
1. A monolithically integrated semiconductor device structure comprising:
- a silicon substrate;
a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon;
an insulating layer disposed over the first monocrystalline semiconductor layer in a first region;
a monocrystalline silicon layer disposed over the insulating layer in the first region;
at least one silicon-based photodetector comprising an active region including at least a portion of the monocrystalline silicon layer;
a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon; and
at least one non-silicon photodetector comprising an active region including at least a portion of the second monocrystalline semiconductor layer.
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Accused Products
Abstract
Methods and structures for monolithically integrating monocrystalline silicon and monocrystalline non-silicon materials and devices are provided. In one structure, a monolithically integrated semiconductor device structure comprises a silicon substrate and a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon. The structure further includes an insulating layer disposed over the first monocrystalline semiconductor layer in a first region and a monocrystalline silicon layer disposed over the insulating layer in the first region. The structure includes at least one silicon-based photodetector comprising an active region including at least a portion of the monocrystalline silicon layer. The structure also includes a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon. The structure includes at least one non-silicon photodetector comprising an active region including at least a portion of the second monocrystalline semiconductor layer.
279 Citations
40 Claims
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1. A monolithically integrated semiconductor device structure comprising:
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a silicon substrate; a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon; an insulating layer disposed over the first monocrystalline semiconductor layer in a first region; a monocrystalline silicon layer disposed over the insulating layer in the first region; at least one silicon-based photodetector comprising an active region including at least a portion of the monocrystalline silicon layer; a second monocrystalline semiconductor layer disposed over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon; and at least one non-silicon photodetector comprising an active region including at least a portion of the second monocrystalline semiconductor layer. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 17, 18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29, 30, 31, 32, 33, 34)
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35. A method of forming a monolithically integrated semiconductor device structure, the method comprising:
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providing a silicon substrate; forming a first monocrystalline semiconductor layer over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon; forming an insulating layer over the first monocrystalline semiconductor layer in a first region; forming a monocrystalline silicon layer over the insulating layer in the first region; forming at least one silicon-based photodetector comprising an active region including at least a portion of the monocrystalline silicon layer; forming a second monocrystalline semiconductor layer over at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon; and forming at least one non-silicon photodetector comprising an active region including at least a portion of the second monocrystalline semiconductor layer.
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36. A monolithically integrated semiconductor device structure comprising:
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a silicon substrate; a first monocrystalline semiconductor layer disposed over the silicon substrate, wherein the first monocrystalline semiconductor layer has a lattice constant different from a lattice constant of relaxed silicon; a monocrystalline silicon layer disposed over the first monocrystalline semiconductor layer in the first region; at least one silicon-based photodetector comprising an active region including at least a portion of the monocrystalline silicon layer; a second monocrystalline semiconductor layer disposed on at least a portion of the first monocrystalline semiconductor layer in a second region and absent from the first region, wherein the second monocrystalline semiconductor layer has a lattice constant different from the lattice constant of relaxed silicon; and at least one non-silicon photodetector comprising an active region including at least a portion of the second monocrystalline semiconductor layer. - View Dependent Claims (37, 38, 39, 40)
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Specification