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Flash Memory Cell

  • US 20090242959A1
  • Filed: 03/23/2009
  • Published: 10/01/2009
  • Est. Priority Date: 03/28/2008
  • Status: Active Grant
First Claim
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1. A flash memory cell, comprising:

  • a substrate;

    a source and a drain formed in the substrate separately, wherein the source and the drain are heavily doped with N-type ions;

    a first oxide formed on the substrate;

    a floating gate formed on the first oxide, wherein the floating gate is heavily doped with P-type ions;

    a second oxide formed on the floating gate; and

    a control gate formed on the second oxide.

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