SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SAME
First Claim
1. A semiconductor device comprising:
- a semiconductor substrate;
a semiconductor layer having rectangular solid-shape formed at an upper part of the semiconductor substrate to have a top surface being parallel to a principal plane of the semiconductor substrate and a side face with a (100) plane perpendicular to the principal plane of the semiconductor substrate; and
a pMISFET, whereinthe pMISFET has a channel region formed at least at the side face of the semiconductor layer, a gate dielectric film formed at least on the side face of the semiconductor layer, a gate electrode covering the channel region with the gate dielectric film being sandwiched therebetween, and source/drain regions formed within the rectangular solid-shaped semiconductor layer in such a way as to interpose the channel region therebetween, and wherein the channel region is applied a compressive strain in a direction perpendicular to the principal plane of the semiconductor substrate.
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Accused Products
Abstract
A FinFET and nanowire transistor with strain direction optimized in accordance with the sideface orientation and carrier polarity and an SMT-introduced manufacturing method for achieving the same are provided. A semiconductor device includes a pMISFET having a semiconductor substrate, a rectangular solid-shaped semiconductor layer formed at upper part of the substrate to have a top surface parallel to a principal plane of the substrate and a sideface with a (100) plane perpendicular to the substrate'"'"'s principal plane, a channel region formed in the rectangular semiconductor layer, a gate insulating film formed at least on the sideface of the rectangular layer, a gate electrode on the gate insulator film, and source/drain regions formed in the rectangular semiconductor layer to interpose the channel region therebetween. The channel region is applied a compressive strain in the perpendicular direction to the substrate principal plane. A manufacturing method of the device is also disclosed.
65 Citations
15 Claims
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1. A semiconductor device comprising:
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a semiconductor substrate; a semiconductor layer having rectangular solid-shape formed at an upper part of the semiconductor substrate to have a top surface being parallel to a principal plane of the semiconductor substrate and a side face with a (100) plane perpendicular to the principal plane of the semiconductor substrate; and a pMISFET, wherein the pMISFET has a channel region formed at least at the side face of the semiconductor layer, a gate dielectric film formed at least on the side face of the semiconductor layer, a gate electrode covering the channel region with the gate dielectric film being sandwiched therebetween, and source/drain regions formed within the rectangular solid-shaped semiconductor layer in such a way as to interpose the channel region therebetween, and wherein the channel region is applied a compressive strain in a direction perpendicular to the principal plane of the semiconductor substrate. - View Dependent Claims (2, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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3. A semiconductor device comprising:
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a semiconductor substrate; a first semiconductor layer having rectangular solid-shape formed at an upper part of the semiconductor substrate to have a first top surface being parallel to a principal plane of the semiconductor substrate and a first side face with a (110) plane perpendicular to the principal plane of the semiconductor substrate; a second semiconductor layer having rectangular solid-shape formed at the upper part of the semiconductor substrate to have a second top surface being parallel to the principal plane of the semiconductor substrate and a second side surface with a (110) plane perpendicular to the principal plane of the semiconductor substrate; a pMISFET; and an nMISFET, wherein the pMISFET has a first channel region formed at least at the first side face of the first semiconductor layer, a first gate dielectric film formed at least on the first side face of the first semiconductor layer, a first gate electrode covering the first channel region with the first gate dielectric film being sandwiched therebetween, and first source/drain regions formed within the first semiconductor layer in such a way as to interpose the first channel region therebetween, the nMISFET has a second channel region formed at least at the second side face of the second semiconductor layer, a second gate dielectric film formed at least on the second side face of the second semiconductor layer, a second gate electrode covering the second channel region with the second gate dielectric film being sandwiched therebetween, and second source/drain regions formed within the second semiconductor layer in such a way as to interpose the second channel region therebetween, and the second channel region is applied a compressive strain in a direction perpendicular to the principal plane of the semiconductor substrate. - View Dependent Claims (13)
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14. A method of manufacturing a semiconductor device, comprising:
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forming a plurality of semiconductor layers having rectangular solid-shape at an upper part of a semiconductor substrate; forming a gate dielectric film at least on side faces of the semiconductor layers; forming a metal film on the gate dielectric film; depositing on the metal film a semiconductor film in such a way as to fill a portion between adjacent ones of the semiconductor layers; performing impurity ion implantation to amorphasize an upper part of the semiconductor film; patterning the semiconductor film and the metal film to thereby form at least one gate electrode; forming a stress liner dielectric film on the gate electrode; performing thermal processing for crystallizing the upper part of the semiconductor film; and removing the stress liner dielectric film.
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15. A method of manufacturing a semiconductor device, comprising:
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forming a plurality of semiconductor layers having rectangular solid-shape at an upper part of a semiconductor substrate; forming a gate dielectric film at least at side faces of the semiconductor layers; forming a metal film on the gate dielectric film in such a way as to fill a portion between adjacent ones of the semiconductor layers; planarizing the metal film by polishing; depositing a semiconductor film on the metal film; performing impurity ion implantation to amorphasize an upper part of the semiconductor film; patterning the semiconductor film and the metal film to thereby form at least one gate electrode; forming a stress liner dielectric film on the gate electrode; performing thermal processing for crystallizing the upper part of the semiconductor film; and removing the stress liner dielectric film.
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Specification