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SOI TRANSISTOR WITH FLOATING BODY FOR INFORMATION STORAGE HAVING ASYMMETRIC DRAIN/SOURCE REGIONS

  • US 20090242996A1
  • Filed: 01/14/2009
  • Published: 10/01/2009
  • Est. Priority Date: 03/31/2008
  • Status: Abandoned Application
First Claim
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1. A floating body storage transistor, comprising:

  • a gate electrode formed above a semiconductor region and separated therefrom by a gate insulation layer;

    a drain region and a source region formed in said semiconductor region, said drain region and source region defined by a dopant species of a first conductivity type; and

    a floating body region located in said semiconductor region adjacent to and in contact with said drain region and said source region so as to form a first PN junction with said drain region and a second PN junction with said source region, said floating body region being defined by a dopant species of a second conductivity type that is opposite to said first conductivity type, a concentration of said dopant species of the second conductivity type being higher at said first PN junction as compared to said second PN junction.

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