ACTIVE SOLID HEATSINK DEVICE AND FABRICATING METHOD THEREOF

• US 20090245308A1
• Filed: 12/16/2008
• Published: 10/01/2009
• Est. Priority Date: 03/28/2008
• Status: Active Grant

• Current Assignee: Industrial Technology Research Institute
• Original Assignee: Industrial Technology Research Institute
• Inventors: DAI, Ming-Ji, LIU, Chun-Kai, CHENG, Chih-Yuan, YU, Chih-Kuang
• Granted Patent: US 8,222,728 B2
• Time in Patent Office: Days
• US Class Current: 372/36
• CPC Class Codes: H01L 23/38 Cooling arrangements using the Peltier effect
• CPC Class Codes: H01L 2924/00 Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
• CPC Class Codes: H01L 2924/0002 Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
• CPC Class Codes: H01S 3/04 Arrangements for thermal management
• CPC Class Codes: H01S 5/024 Arrangements for thermal management
• CPC Class Codes: H01S 5/02476 Heat spreaders, i.e. improving heat flow between laser chip and heat dissipating elements
• CPC Class Codes: H10N 19/00 Integrated devices, or assemblies of multiple devices, comprising at least one thermoelectric or thermomagnetic element covered by groups H10N10/00 - H10N15/00

Abstract

An active solid heatsink device and fabricating method thereof is related to a high-effective solid cooling device, where heat generated by a heat source with a small area and a high heat-generating density diffuses to a whole substrate using a heat conduction characteristic of hot electrons of a thermionic (TI) structure, and the thermionic (TI) structure and a thermo-electric (TE) structure share the substrate where the heat diffuses to. Further, the shared substrate serves as a cold end of the TE structure, and the heat diffusing to the shared substrate is pumped to another substrate of the TE structure serving as a hot end of the TE structure.

Claims

1. An active solid heatsink device, comprising:

a first substrate, being heavy doped;

a metal layer, located on the first substrate, and having a first electrode;

a semiconductor film block, located on the first substrate on which the metal layer is located, and spaced from the metal layer; and

a second electrode, connected to the semiconductor film block, and spaced from the metal layer and the first substrate.

2. The active solid heatsink device according to claim 1, wherein the metal layer further has a heat-spreading block, which is located between the first electrode and the semiconductor film block, and is spaced from the first electrode and the semiconductor film block.

3. The active solid heatsink device according to claim 1, further comprising:

an insulating layer, covered on the metal layer opposite to the first substrate.

4. The active solid heatsink device according to claim 3, further comprising:

a second substrate; and

one or more thermo-electric (TE) structures, located between the insulating layer and the second substrate, and connected to the insulating layer and the second substrate.

5. The active solid heatsink device according to claim 4, wherein each of the TE structures comprises:

a third electrode, located on the insulating layer opposite to the metal layer, and electrically isolating the first electrode and the second electrode by the insulating layer;

a pair of fourth electrodes, located on the second substrate;

a P channel, one end of which is connected to the third electrode, and the other end of which is connected to one of the pair of fourth electrodes opposite to the second substrate; and

an N channel, one end of which is connected to the third electrode, and the other end of which is connected to the other one of the pair of fourth electrodes opposite to the second substrate.

6. The active solid heatsink device according to claim 5, wherein the adjacent two of the fourth electrodes are connected to each other, and the fourth electrodes connected to each other individually belong to the different pairs of fourth electrodes.

7. The active solid heatsink device according to claim 5, wherein the fourth electrodes in contact with the N channel are connected to each other, and the fourth electrodes in contact with the P channel are connected to each other.

8. The active solid heatsink device according to claim 4, wherein at least two of the TE structures are serially connected to each other.

9. The active solid heatsink device according to claim 4, wherein at least two of the TE structures are connected in parallel to each other.

10. The active solid heatsink device according to claim 3, wherein each of the first electrode and the second electrode has a voltage feeding portion, and the insulating layer exposes the voltage feeding portions.

11. The active solid heatsink device according to claim 3, further comprising:

one or more third electrodes, located on the insulating layer opposite to the metal layer, and electrically isolating the first electrode and the second electrode by the insulating layer.

12. The active solid heatsink device according to claim 11, further comprising:

one or more pairs of fourth electrodes;

one or more P channels, each of which corresponds to one of the third electrodes and one pair of the pairs of fourth electrodes, and is connected between the corresponding third electrode and one of the corresponding pair of fourth electrodes; and

one or more N channels, respectively corresponding to the P channels, wherein each of the N channels is connected between the third electrode connected to the corresponding P channel and the other one of the pair of fourth electrodes connected to the corresponding P channel.

13. The active solid heatsink device according to claim 12, wherein the adjacent two of the fourth electrodes are connected to each other, and the fourth electrodes connected to each other belong to the different pairs of fourth electrodes.

14. The active solid heatsink device according to claim 12, wherein the fourth electrodes in contact with the N channels are connected to each other, and the fourth electrodes in contact with the P channels are connected to each other.

15. The active solid heatsink device according to claim 11, further comprising:

a second substrate, located on the pairs of fourth electrodes opposite to the P channels and the N channels.

16. The active solid heatsink device according to claim 1, wherein the metal layer further has a notch, which extends from the semiconductor film block to far away, to expose the first substrate, wherein the second electrode is located above the notch.

17. The active solid heatsink device according to claim 1, wherein the second electrode is covered on the semiconductor film block.

18. A method of fabricating an active solid heatsink device, comprising:

providing a first substrate with heavy doped;

forming a semiconductor film block and a metal layer on the same surface of the first substrate, wherein the semiconductor film block and the metal layer are spaced apart, and the metal layer has a first electrode; and

forming a second electrode connected to the semiconductor film and spaced from the metal layer and the first substrate.

19. The method of fabricating an active solid heatsink device according to claim 18, further comprising:

forming an insulating layer for covering the metal layer.

20. The method of fabricating an active solid heatsink device according to claim 19, further comprising:

forming one or more thermo-electric (TE) structures on the insulating layer opposite to the metal layer, wherein the TE structures are electrically isolated from the first electrode and the second electrode by the insulating layer; and

forming a second substrate on the TE structures, wherein a cold end of each of the TE structures contacts with the insulating layer, and a hot end of each of the TE structures contacts with the second substrate.

21. The method of fabricating an active solid heatsink device according to claim 20, wherein the step of forming the TE structures comprises:

forming one or more third electrodes on the insulating layer opposite to the metal layer;

forming a P channel and an N channel on each of the third electrodes opposite to the insulating layer; and

respectively forming a pair of fourth electrodes on both of the P channel and the N channel which contact with the same third electrode opposite to the third electrode, wherein the surfaces of the pairs of fourth electrodes opposite to the P channels and the N channels are used to contact with the second substrate.

22. The method of fabricating an active solid heatsink device according to claim 21, wherein in the step of forming the pairs of fourth electrodes, the adjacent two of the fourth electrodes are connected to each other, and the fourth electrodes connected to each other individually belong to the different pairs of fourth electrodes.

23. The method of fabricating an active solid heatsink device according to claim 21, wherein in the step of forming the pairs of fourth electrodes, the fourth electrodes in contact with the N channels are connected to each other, and the fourth electrodes in contact with the P channels are connected to each other.

24. The method of fabricating an active solid heatsink device according to claim 19, further comprising:

providing a second substrate;

forming one or more TE structures each with a cold end and a hot end, which are opposite to each other, on the second substrate, wherein the hot end of each of the TE structures contacts with the second substrate; and

connecting the TE structures with the insulating layer opposite to the metal layer, wherein the cold end of each of the TE structures contacts with the insulating layer.

25. The method of fabricating an active solid heatsink device according to claim 24, wherein the step of forming the TE structures comprises:

forming one or more pairs of fourth electrodes on the second substrate;

forming a P channel on one fourth electrode of each pair of the pairs of fourth electrodes opposite to the second substrate;

forming an N channel on the other one fourth electrode of each pair of the pairs of fourth electrodes opposite to the second substrate; and

respectively forming a third electrode on both of the P channel and the N channel, which are connected to the same pair of fourth electrodes, opposite to the pair of fourth electrodes, wherein the other side of the third electrode opposite to the P channel and the N channel is used to contact the insulating layer.

26. The method of fabricating an active solid heatsink device according to claim 25, wherein in the step of forming the pairs of fourth electrodes, the adjacent two of the fourth electrodes are connected to each other, and the fourth electrodes connected to each other individually belong to the different pairs of fourth electrodes.

27. The method of fabricating an active solid heatsink device according to claim 25, wherein in the step of forming the pairs of the fourth electrodes, the fourth electrodes in contact with the N channels are connected to each other, and the fourth electrodes in contact with the P channels are connected to each other.

28. The method of fabricating an active solid heatsink device according to claim 19, wherein the step of forming the insulating layer comprises:

forming the insulating layer for covering the metal layer and the second electrode.

29. The method of fabricating an active solid heatsink device according to claim 28, wherein the step of forming the insulating layer comprises:

forming the insulating layer that exposes the first electrode and the second electrode, wherein the parts of the first electrode and the second electrode exposed by the insulating layer is used to apply voltage.

30. The method of fabricating an active solid heatsink device according to claim 18, wherein the step of forming the semiconductor film block and the metal layer comprises:

forming the metal layer spaced from the semiconductor film block on the first substrate; and

forming a groove that exposes the first substrate on the metal layer, so as to partition the metal layer into two blocks, wherein the block of the metal layer located on the other side of the groove opposite to the semiconductor film block is the first electrode.

31. The method of fabricating an active solid heatsink device according to claim 18, wherein the step of providing the first substrate comprises:

providing a base material; and

heavily doping the base material with a plurality of dopants to form the first substrate.

32. The method of fabricating an active solid heatsink device according to claim 18, wherein the step of forming the semiconductor film block and the metal layer comprises:

forming the metal layer having a notch on the first substrate, wherein the semiconductor film block is located in the notch and spaced from the metal layer by the notch.

33. The method of fabricating an active solid heatsink device according to claim 32, wherein the step of forming the metal layer having the notch comprises:

forming the metal layer having the notch extending from the position of the corresponding semiconductor film block to far away on the first substrate.

34. The method of fabricating an active solid heatsink device according to claim 33, wherein the step of forming the second electrode comprises:

forming an insulating layer on the first substrate in the notch; and

forming the second electrode connected to the semiconductor film block and spaced from the metal layer on the insulating layer at a position corresponding to the notch.

35. The method of fabricating an active solid heatsink device according to claim 18, wherein the step of forming the second electrode further comprises:

forming the second electrode for covering the semiconductor film block.

36. The method of fabricating an active solid heatsink device according to claim 18, further comprising:

forming an insulating layer for covering the metal layer; and

forming at least one third electrode on the other surface of the insulating layer opposite to the metal layer.

37. The method of fabricating an active solid heatsink device according to claim 36, further comprising:

fabricating a TE structure on the other surface of each third electrode opposite to the insulating layer.