PATTERNING RESOLUTION ENHANCEMENT COMBINING INTERFERENCE LITHOGRAPHY AND SELF-ALIGNED DOUBLE PATTERNING TECHNIQUES
First Claim
1. A method for providing regular line patterns using interference lithography and sidewall patterning techniques, the method comprising:
- providing a plurality of regularly spaced parallel lines on a template using interference lithography, wherein the template is provided on a substrate;
depositing sidewalls on at least both longitudinal sides of the plurality of regularly spaced parallel lines;
removing the plurality of regularly spaced parallel lines, wherein after removal of the plurality of regularly spaced parallel lines a plurality of sidewall lines are left on the substrate;
etching portions of the substrate; and
removing the sidewall lines.
1 Assignment
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Accused Products
Abstract
A method for providing regular line patterns using interference lithography and sidewall patterning techniques is provided according to one embodiment. The method comprising may include producing regularly spaced parallel lines on a template using interference lithography techniques and then depositing sidewalls on the longitudinal sides of the regularly spaced parallel lines using sidewall patterning techniques. Various deposition and etching steps may also be included. The embodiments of the invention may provide regular line patterns with a line density half the interference lithography line density. Various lithography techniques may also be used to crop rounded connecting resulting from the sidewall patterning and/or to alter portions of the line pattern.
33 Citations
25 Claims
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1. A method for providing regular line patterns using interference lithography and sidewall patterning techniques, the method comprising:
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providing a plurality of regularly spaced parallel lines on a template using interference lithography, wherein the template is provided on a substrate; depositing sidewalls on at least both longitudinal sides of the plurality of regularly spaced parallel lines; removing the plurality of regularly spaced parallel lines, wherein after removal of the plurality of regularly spaced parallel lines a plurality of sidewall lines are left on the substrate; etching portions of the substrate; and removing the sidewall lines. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12)
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13. A method for providing printed line widths with a half pitch below 22 nm on a substrate, the method comprising:
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providing a plurality of regularly spaced printed lines on a template with a half pitch below 44 nm using interference lithography techniques; and applying spacers on the longitudinal sides of the plurality of printed lines on the template, wherein the spacers have a half pitch below 22 nm. - View Dependent Claims (14)
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15. A method for providing an array of regularly spaced printed lines in a semiconductor device, the method comprising:
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providing a semiconductor device, wherein the semiconductor device includes a plurality of layers including a substrate, hardmask and photoresist; exposing a line pattern in the photoresist using interference lithography, wherein the line pattern has a first line width and a first line spacing; developing the line pattern in the photoresist, wherein after the developing a photoresist line pattern is formed on the hardmask; trimming the photoresist line pattern;
wherein the resulting trimmed line pattern has a second line width and a second line spacing, the second line spacing is equal to approximately three times the second line width, and the second line spacing is narrower than the first line spacing;etching the hardmask, wherein after the etching a hardmask line pattern is formed in the hardmask; removing the photoresist; depositing a spacer film over at least the hardmask line pattern; etching the spacer film, wherein after the etching a plurality of spacer lines are formed at the sidewalls of the hardmask line pattern, each of the spacer lines have a line width approximately equal to the second line width, the etching results in rounded spacer connects; removing the hardmask; cropping the rounded spacer connects; and etching the substrate, wherein after the etching a plurality of lines are formed in the substrate. - View Dependent Claims (16, 17, 18, 19, 20, 21, 22, 23, 24, 25)
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Specification