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ETCHING METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

  • US 20090246965A1
  • Filed: 03/25/2009
  • Published: 10/01/2009
  • Est. Priority Date: 03/26/2008
  • Status: Abandoned Application
First Claim
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1. An etching method of a substrate in which at least a silicon oxide film, a polysilicon film and a mask film having an opening are sequentially formed on a silicon base material, the method comprising:

  • a polysilicon film etching process for etching the polysilicon film corresponding to the opening by using plasma generated from a processing gas containing an oxygen gas,wherein, in the polysilicon film etching process, an ambient pressure is set to be in a range from about 6.7 Pa to 33.3 Pa and a frequency of bias voltage for providing the plasma to the substrate is set to be equal to or more than about 13.56 MHz, so that the polysilicon film corresponding to the opening is etched.

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