Gas Head and Thin-Film Manufacturing Apparatus

• US 20090250004A1
• Filed: 11/13/2006
• Published: 10/08/2009
• Est. Priority Date: 12/06/2005
• Status: Active Grant

• Current Assignee: Ulvac Incorporated
• Original Assignee: Ulvac Incorporated
• Inventors: Uematsu, Masaki, Kato, Nobuyuki, Yamada, Takakazu
• Granted Patent: US 8,197,599 B2
• Time in Patent Office: Days
• US Class Current: 118/722
• CPC Class Codes: C23C 16/45514 Mixing in close vicinity to the substrate
• CPC Class Codes: C23C 16/45565 Shower nozzles
• CPC Class Codes: C23C 16/45574 Nozzles for more than one gas

Abstract

A gas head that, at low cost, is capable of suppressing any deactivation of radical gas and capable of uniformly introducing a raw material gas on a substrate; and a relevant thin-film manufacturing apparatus are provided. A gas head (13) according to the present invention includes a reactive gas introduction port (30A) for introduction of a reactive gas, a plurality of raw material gas introduction ports (30B) for introduction of a raw material gas, and a dispersion board (32) for dispersing the raw material gas, wherein the plurality of the raw material gas introduction ports (30B) are disposed so as to surround the periphery of the reactive gas introduction port (30A). The reactive gas having been introduced in the reactive gas introduction port (30A) is mixed with the raw material gas having been introduced through a plurality of raw material gas introduction ports (30B) and dispersed by means of the dispersion board (32). Although the plurality of raw material gas introduction ports (30B) are disposed around the reactive gas introduction port (30A), they are not required to be minute holes such as shower holes.

Claims

1. :

A gas head, comprising;

a first gas introduction port for introduction of a first gas;

a second gas introduction port for introduction of a second gas; and

a dispersion board disposed opposite to the second gas introduction port, for dispersing the second gas,

wherein the second gas introduction port is provided in a plurality of numbers so as to surround the periphery of the first gas introduction port.

2. :

The gas head according to claim 1,

wherein the plurality of second gas introduction ports are disposed at equal distances from the first gas introduction port.

3. :

The gas head according to claim 1,

wherein the plurality of second gas introduction ports are disposed around the first gas introduction port at equiangular intervals.

4. :

The gas head according to claim 1,

wherein the first gas introduction port and the plurality of second gas introduction ports are formed on a base member disposed opposite to and spaced apart from the dispersion board.

5. :

The gas head according to claim 4,

wherein the dispersion board includes an opening larger that the first gas introduction port formed in a region opposite to the first gas introduction port.

6. :

The gas head according to claim 4,

wherein the first gas introduction port is formed such that an opening diameter of the first gas introduction port becomes larger toward the dispersion board.

7. :

A thin-film manufacturing apparatus, comprising;

a film-forming chamber;

evacuating means for evacuating the film-forming chamber;

a stage disposed in the film-forming chamber, for supporting a substrate to be treated; and

a gas head disposed opposite to the stage, for introducing film-forming gases into the film-forming chamber,

wherein the gas head includes;

a base member including a first gas introduction port for introducing a first film-forming gas formed in a center portion thereof and a plurality of second gas introduction ports for introducing a second film-forming gas formed around the first gas introduction port; and

a dispersion board disposed opposite to and spaced apart from the base member, thereby shielding the plurality of second gas introduction ports, and having an opening in a region opposite to the first gas introduction port.

8. :

The thin-film manufacturing apparatus according to claim 7,

wherein the plurality of second gas introduction ports are disposed at equal distances from the first gas introduction port.

9. :

The thin-film manufacturing apparatus according to claim 7,

wherein the opening of the dispersion board has an area larger than that of the first gas introduction port.

10. :

The thin-film manufacturing apparatus according to claim 7,

wherein the gas head is provided with a radical source for exciting the first film-forming gas.

11. :

The thin-film manufacturing apparatus according to claim 7,

wherein the first film-forming gas is a reactive gas or an inert gas, and the second film-forming gas is a raw material gas.

12. :

The thin-film manufacturing apparatus according to claim 7,

wherein the distance between a region of the dispersion board opposite to the plurality of second gas introduction ports and a periphery of the opening of the dispersion board is at least 50 mm.

13. :

The thin-film manufacturing apparatus according to claim 7,

wherein the ratio (G/L) of a gap (G) between the base member and the dispersion board to a distance (L) between a region of the dispersion board opposite to the plurality of second gas introduction ports and a periphery of the opening of the dispersion board is equal to or smaller than 0.04.

14. :

The thin-film manufacturing apparatus according to claim 7,

wherein the opening of the dispersion board has an area 0.25 times or more than the area of a substrate to be treated on the stage.

15. :

The thin-film manufacturing apparatus according to claim 14,

wherein the distance between the stage and the dispersion board is equal to or smaller than 40 mm.