Thin film transistor, display device, including the same, and associated methods
First Claim
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1. A thin film transistor (TFT), comprising:
- a substrate;
a gate electrode on the substrate;
an oxide semiconductor layer including a channel region, a source region, and a drain region;
a gate insulating layer between the gate electrode and the oxide semiconductor layer; and
source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively,wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.
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Abstract
A thin film transistor (TFT), including a substrate, a gate electrode on the substrate, an oxide semiconductor layer including a channel region, a source region, and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer.
110 Citations
14 Claims
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1. A thin film transistor (TFT), comprising:
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a substrate; a gate electrode on the substrate; an oxide semiconductor layer including a channel region, a source region, and a drain region; a gate insulating layer between the gate electrode and the oxide semiconductor layer; and source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the oxide semiconductor layer has a GaInZnO (GIZO) bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer. - View Dependent Claims (2, 3)
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4. A display device, comprising:
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a first substrate including a thin film transistor; and a second substrate opposite to the first substrate;
wherein the thin film transistor includes;a gate electrode on the first substrate, an oxide semiconductor layer including a channel region, a source region and a drain region, a gate insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain electrodes in contact with the source and drain regions, respectively, and the oxide semiconductor layer includes a GIZO bilayer structure including a lower layer and an upper layer, and the upper layer has a different indium (In) concentration than the lower layer. - View Dependent Claims (5, 6, 7, 8)
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9. A method of manufacturing a display device, comprising:
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forming a thin film transistor, including; forming a gate electrode on a substrate; forming a gate insulating layer on the substrate having the gate electrode; forming on the gate insulating layer an oxide semiconductor layer with a channel region, a source region and a drain region; forming source and drain electrodes in contact with the source and drain regions of the oxide semiconductor layer, respectively, wherein the forming of the oxide semiconductor layer includes; depositing ions including In, Ga, and Zn from a target to form a lower layer on the gate insulating layer, and forming an upper layer on the lower layer, the upper layer having an In concentration lower than the lower layer, and providing a display panel with the thin film transistor. - View Dependent Claims (10, 11, 12, 13, 14)
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Specification