SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF DISPLAY DEVICE
First Claim
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1. A semiconductor device comprising a substrate and a semiconductor layer having a channel region, wherein:
- the channel region comprises an oxide semiconductor which satisfies Vc/Va>
4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
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Abstract
A semiconductor device includes a substrate and a semiconductor layer having a channel region, the channel region is made from an oxide semiconductor which satisfies Vc/Va>4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.
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Citations
29 Claims
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1. A semiconductor device comprising a substrate and a semiconductor layer having a channel region, wherein:
the channel region comprises an oxide semiconductor which satisfies Vc/Va>
4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.- View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16)
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17. A manufacturing method of a semiconductor device comprising a substrate and a semiconductor layer having a channel region, wherein:
the channel region is formed with an oxide semiconductor which satisfies Vc/Va>
4 where Vc is a volume ratio of a crystalline component and Va is a volume ratio of a non-crystalline component.- View Dependent Claims (18, 19, 20, 21, 22, 23, 24, 25, 26, 27, 28, 29)
Specification