ELECTROMAGNETIC WAVE DETECTING ELEMENT

• US 20090250699A1
• Filed: 03/27/2009
• Published: 10/08/2009
• Est. Priority Date: 04/02/2008
• Status: Active Grant

• Current Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Original Assignee: Fujifilm Corporation (Fujifilm Holdings Corporation)
• Inventors: Okada, Yoshihiro
• Granted Patent: US 9,343,503 B2
• Time in Patent Office: Days
• US Class Current: 257/53
• CPC Class Codes: G01T 1/202 the detector being a crystal
• CPC Class Codes: H01L 27/14609 Pixel-elements with integrated switching, control, storage or amplification elements scanning details of imagers (circuitry of solid-state image sensors H04N25/00); circuitry of imagers H04N25/70
• CPC Class Codes: H01L 27/14616 characterised by the channel of the transistor, e.g. channel having a doping gradient
• CPC Class Codes: H01L 27/1462 Coatings
• CPC Class Codes: H01L 27/14623 Optical shielding
• CPC Class Codes: H01L 27/1463 Pixel isolation structures
• CPC Class Codes: H01L 27/14636 Interconnect structures
• CPC Class Codes: H01L 27/14663 Indirect radiation imagers, e.g. using luminescent members
• CPC Class Codes: H01L 27/14685 Process for coatings or optical elements
• CPC Class Codes: H01L 27/14692 Thin film technologies, e.g. amorphous, poly, micro- or nanocrystalline silicon

Abstract

The present invention provides an electromagnetic wave detecting element that can suppress occurrence of cracking at a substrate peripheral portion, and occurrence of breakage of lead-out wires. An interlayer insulating film is formed so as to cover TFT switches on a substrate. An interlayer insulating film is formed so as to cover semiconductor layer of sensor portions that generate charges due to electromagnetic waves that are an object of detection being irradiated, and cover a region on the substrate where the interlayer insulating film is formed.

Claims

1. An electromagnetic wave detecting element comprising:

a substrate including a plurality of scan lines and a plurality of signal lines disposed to intersect one another, and TFT switching elements provided at respective intersection portions of the scan lines and the signal lines;

a first flattening film formed to cover the TFT switching elements of the respective intersection portions on the substrate, and flattening a surface;

sensor portions provided on the first flattening film to correspond respectively to the intersection portions, and connected respectively to the TFT switching elements, and generating charges as a result of electromagnetic waves that are an object of detection being irradiated; and

a second flattening film formed to cover the sensor portions on the first flattening film and a region on the substrate at which the first flattening film is formed, and flattening a surface.

2. The electromagnetic wave detecting element of claim 1, further comprising a protective insulating film formed of an inorganic material and provided between the first flattening film and the second flattening film.

3. The electromagnetic wave detecting element of claim 1, further comprising a protective insulating film formed of an inorganic material and covering the second flattening film.

4. The electromagnetic wave detecting element of claim 1, wherein

the sensor portions generate charges as a result of light being illuminated, and

the electromagnetic wave detecting element further comprises a wavelength converting layer provided on the second flattening film such that end portions of the wavelength converting layer are at an inner side of the second flattening film, the wavelength converting layer converting radiation into light.

5. The electromagnetic wave detecting element of claim 4, wherein the wavelength converting layer is formed in a shape of a sheet of a size that is smaller than a size of a region at which the second flattening film is formed, and is provided on the second flattening film by being affixed such that the end portions of the wavelength converting layer are at the inner side of the second flattening film.