METHOD FOR FORMING A COMPOUND SEMI-CONDUCTOR THIN-FILM
First Claim
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1. A method of fabricating a thin-film semiconductor device, comprising:
- providing a plurality of raw semiconductor materials;
pre-reacting the raw semiconductor materials to form a homogeneous compound semiconductor target material; and
depositing the compound semiconductor target material onto a substrate to form a thin-film having a composition substantially the same as a composition of the compound semiconductor target material.
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Abstract
A method is provided for fabricating a thin film semiconductor device. The method includes providing a plurality of raw semiconductor materials. The raw semiconductor materials undergo a pre-reacting process to form a homogeneous compound semiconductor target material. The compound semiconductor target material is deposited onto a substrate to form a thin film having a composition substantially the same as a composition of the compound semiconductor target material.
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Citations
22 Claims
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1. A method of fabricating a thin-film semiconductor device, comprising:
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providing a plurality of raw semiconductor materials; pre-reacting the raw semiconductor materials to form a homogeneous compound semiconductor target material; and depositing the compound semiconductor target material onto a substrate to form a thin-film having a composition substantially the same as a composition of the compound semiconductor target material. - View Dependent Claims (2, 3, 4, 5, 6, 7, 8, 9, 10, 11, 12, 13, 14, 15, 16, 22)
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17. A photovoltaic device, comprising:
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a substrate; a first electrode disposed on the substrate; a light absorbing layer that includes a Reacted Target Physical Deposition (RTPD) compound semiconductor thin-film; and a second electrode disposed over the light absorbing layer. - View Dependent Claims (18, 19)
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20. A target for use in a fabricating a thin-film, comprising:
a Reacted Target Physical Deposition (RTPD) compound semiconductor material having a prescribed bandgap. - View Dependent Claims (21)
Specification