Electric power converter and mounting structure of semiconductor device
First Claim
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1. A mounting structure of a semiconductor device, the structure comprising:
- a semiconductor module including a semiconductor element for supplying electricity, a first and a second electrode plates disposed on both sides of the semiconductor element, a connecting terminal connected to a control circuit for controlling the semiconductor element, and a resin mold having electric insulation for sealing the semiconductor element and the first and the second electrode plates; and
a first and a second holding members as a dielectric member having electric insulation for holding the semiconductor module from both sides of the semiconductor module and including a first and a second electrically conductive inner members inserted into the first and the second holding members, respectively, whereinthe first or second electrode plate, the first or second inner member, wall portion of the first or second holding member provide a bypass capacitor for reducing noise.
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Abstract
An electric power converter has a main circuit section including a semiconductor module and a cooling device; a control circuit substrate section electrically connected to a signal terminal of the semiconductor module, and having a control circuit; and a power wiring section connected to a main electrode terminal of the semiconductor module. The main circuit section is interposed between the control circuit substrate section and the power wiring section.
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Citations
3 Claims
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1. A mounting structure of a semiconductor device, the structure comprising:
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a semiconductor module including a semiconductor element for supplying electricity, a first and a second electrode plates disposed on both sides of the semiconductor element, a connecting terminal connected to a control circuit for controlling the semiconductor element, and a resin mold having electric insulation for sealing the semiconductor element and the first and the second electrode plates; and a first and a second holding members as a dielectric member having electric insulation for holding the semiconductor module from both sides of the semiconductor module and including a first and a second electrically conductive inner members inserted into the first and the second holding members, respectively, wherein the first or second electrode plate, the first or second inner member, wall portion of the first or second holding member provide a bypass capacitor for reducing noise. - View Dependent Claims (2, 3)
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Specification